Computer simulations and experimental verification of electron-induced resist outgassing and optics carbon contamination: EUV lithography related

Samenvatting

The work described in this report has been conducted as a graduation project. This project was carried out at ASML as part of a Master's Degree in Applied Physics at Eindhoven University of Technology. Extreme ultraviolet lithography (EUVL) is widely considered as the most promising next genera-tion lithography technology. And a long optics-lifetime is vital to the successful adoption of EUVL technology in the industrial world. Radiation-induced resist-outgassing and radiation-induced carbon-deposition are two critical processes of optics contamination which shorten the optics-lifetime of an EUVL system. Due to their much easier access and high intensity, e-beams are widely applied to mimic an ac-tual EUV light beam in EUV optics-contamination research. In order to gain a better understand-ing of the mechanism of optics contamination and therefore provide general guidance on re-placing an EUV light source by an electron source in such research, a series of experiments on electron-induced resist outgassing and electron-induced carbon deposition were carried out in this work. Prior to the experimental work, a Monde-Carlo Simulation was performed which would then benefit the analysis of the experimental results.

Datum prijs	31 aug. 2010
Originele taal	Engels
Begeleider	Johannes W. van Dijk (Externe coach), Jens Steinhoff (Externe coach) & Paul M. Koenraad (Afstudeerdocent 1)