Samenvatting
slew rate controlled driver topology is currentlyused to drive silicon IGBTs (Insulated-Gate Bipolar Transistor) in
railway traction inverters. Controlling the slew rate of the voltage
during switching is beneficial for lowering EMI (Electromagnetic
Interference), reduces the size (or even eliminates) the need for
an output filter and prevents accelerated the ageing of motor
winding insulation. For advancement to a new generation of
WBG (Wide Bandgap) semiconductor devices, the switching
behaviour of SiC (Silicon Carbide) MOSFETs (Metal Oxide
Semiconductor Field Effect Transistor) is investigated. A slew
rate controlled gate drive concept is analysed and compared
with a conventional resistive driver considering 1700V SiC
MOSFETs. The switching behaviour is simulated and compared
with measured data using a double pulse test.
The controlled driver is able to control slew rates during
switching and the waveforms match with simulations. The measured
waveforms are used to determine the switching losses with
some success. In addtion, a caloric measurement is discussed to
determine the switching losses more accurately.
Datum prijs | 12 okt. 2018 |
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Originele taal | Engels |
Begeleider | Henk Huisman (Afstudeerdocent 1) |