[Zr(NEtMe)2(guan-NEtMe)2] as a novel ALD precursor: ZrO2 film growth and mechanistic studies

T. Blanquart; J. Niinistö; N. Aslam; M. Banerjee; Y. Tomczak; M. Gavagnin; V. Longo; E. Puukilainen; H.D. Wanzenboeck; W.M.M. Kessels; A. Devi; S. Hoffmann-Eifert; M. Ritala; M. Leskelä

doi:10.1021/cm401279v

[Zr(NEtMe)2(guan-NEtMe)2] as a novel ALD precursor: ZrO2 film growth and mechanistic studies

T. Blanquart, J. Niinistö, N. Aslam, M. Banerjee, Y. Tomczak, M. Gavagnin, V. Longo, E. Puukilainen, H.D. Wanzenboeck, W.M.M. Kessels, A. Devi, S. Hoffmann-Eifert, M. Ritala, M. Leskelä

Plasma & Materials Processing

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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[Zr(NEtMe)2(guan-NEtMe2)2], a recently developed compound, was investigated as a novel precursor for the atomic layer deposition (ALD) of ZrO2. With water as the oxygen source, the growth rate remained constant over a wide temperature range, whereas with ozone the growth rate increased steadily with deposition temperature. Both ALD processes were successfully developed: the characteristic self-limiting ALD growth mode was confirmed at 300 °C. The growth rates were exceptionally high, 0.9 and 1.15 Å/cycle with water and ozone, respectively. X-ray diffraction (XRD) indicated that the films were deposited in the high-permittivity cubic phase, even when grown at temperatures as low as 250 °C. Compositional analysis performed by means of X-ray photoelectron spectroscopy (XPS) demonstrated low carbon and nitrogen contamination (

Originele taal-2	Engels
Pagina's (van-tot)	3088-
Tijdschrift	Chemistry of Materials
Volume	25
DOI's	https://doi.org/10.1021/cm401279v
Status	Gepubliceerd - 2013

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10.1021/cm401279v

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Blanquart, T., Niinistö, J., Aslam, N., Banerjee, M., Tomczak, Y., Gavagnin, M., Longo, V., Puukilainen, E., Wanzenboeck, H. D., Kessels, W. M. M., Devi, A., Hoffmann-Eifert, S., Ritala, M., & Leskelä, M. (2013). [Zr(NEtMe)2(guan-NEtMe)2] as a novel ALD precursor: ZrO2 film growth and mechanistic studies. Chemistry of Materials, 25, 3088-. https://doi.org/10.1021/cm401279v

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title = "[Zr(NEtMe)2(guan-NEtMe)2] as a novel ALD precursor: ZrO2 film growth and mechanistic studies",

abstract = "[Zr(NEtMe)2(guan-NEtMe2)2], a recently developed compound, was investigated as a novel precursor for the atomic layer deposition (ALD) of ZrO2. With water as the oxygen source, the growth rate remained constant over a wide temperature range, whereas with ozone the growth rate increased steadily with deposition temperature. Both ALD processes were successfully developed: the characteristic self-limiting ALD growth mode was confirmed at 300 °C. The growth rates were exceptionally high, 0.9 and 1.15 {\AA}/cycle with water and ozone, respectively. X-ray diffraction (XRD) indicated that the films were deposited in the high-permittivity cubic phase, even when grown at temperatures as low as 250 °C. Compositional analysis performed by means of X-ray photoelectron spectroscopy (XPS) demonstrated low carbon and nitrogen contamination (",

author = "T. Blanquart and J. Niinist{\"o} and N. Aslam and M. Banerjee and Y. Tomczak and M. Gavagnin and V. Longo and E. Puukilainen and H.D. Wanzenboeck and W.M.M. Kessels and A. Devi and S. Hoffmann-Eifert and M. Ritala and M. Leskel{\"a}",

year = "2013",

doi = "10.1021/cm401279v",

language = "English",

volume = "25",

pages = "3088--",

journal = "Chemistry of Materials",

issn = "0897-4756",

publisher = "American Chemical Society",

}

[Zr(NEtMe)2(guan-NEtMe)2] as a novel ALD precursor: ZrO2 film growth and mechanistic studies. / Blanquart, T.; Niinistö, J.; Aslam, N.; Banerjee, M.; Tomczak, Y.; Gavagnin, M.; Longo, V.; Puukilainen, E.; Wanzenboeck, H.D.; Kessels, W.M.M.; Devi, A.; Hoffmann-Eifert, S.; Ritala, M.; Leskelä, M.

In: Chemistry of Materials, Vol. 25, 2013, blz. 3088-.

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

TY - JOUR

T1 - [Zr(NEtMe)2(guan-NEtMe)2] as a novel ALD precursor: ZrO2 film growth and mechanistic studies

AU - Blanquart, T.

AU - Niinistö, J.

AU - Aslam, N.

AU - Banerjee, M.

AU - Tomczak, Y.

AU - Gavagnin, M.

AU - Longo, V.

AU - Puukilainen, E.

AU - Wanzenboeck, H.D.

AU - Kessels, W.M.M.

AU - Devi, A.

AU - Hoffmann-Eifert, S.

AU - Ritala, M.

AU - Leskelä, M.

PY - 2013

Y1 - 2013

N2 - [Zr(NEtMe)2(guan-NEtMe2)2], a recently developed compound, was investigated as a novel precursor for the atomic layer deposition (ALD) of ZrO2. With water as the oxygen source, the growth rate remained constant over a wide temperature range, whereas with ozone the growth rate increased steadily with deposition temperature. Both ALD processes were successfully developed: the characteristic self-limiting ALD growth mode was confirmed at 300 °C. The growth rates were exceptionally high, 0.9 and 1.15 Å/cycle with water and ozone, respectively. X-ray diffraction (XRD) indicated that the films were deposited in the high-permittivity cubic phase, even when grown at temperatures as low as 250 °C. Compositional analysis performed by means of X-ray photoelectron spectroscopy (XPS) demonstrated low carbon and nitrogen contamination (

AB - [Zr(NEtMe)2(guan-NEtMe2)2], a recently developed compound, was investigated as a novel precursor for the atomic layer deposition (ALD) of ZrO2. With water as the oxygen source, the growth rate remained constant over a wide temperature range, whereas with ozone the growth rate increased steadily with deposition temperature. Both ALD processes were successfully developed: the characteristic self-limiting ALD growth mode was confirmed at 300 °C. The growth rates were exceptionally high, 0.9 and 1.15 Å/cycle with water and ozone, respectively. X-ray diffraction (XRD) indicated that the films were deposited in the high-permittivity cubic phase, even when grown at temperatures as low as 250 °C. Compositional analysis performed by means of X-ray photoelectron spectroscopy (XPS) demonstrated low carbon and nitrogen contamination (

U2 - 10.1021/cm401279v

DO - 10.1021/cm401279v

M3 - Article

VL - 25

SP - 3088-

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

ER -