[Zr(NEtMe)2(guan-NEtMe)2] as a novel ALD precursor: ZrO2 film growth and mechanistic studies

T. Blanquart, J. Niinistö, N. Aslam, M. Banerjee, Y. Tomczak, M. Gavagnin, V. Longo, E. Puukilainen, H.D. Wanzenboeck, W.M.M. Kessels, A. Devi, S. Hoffmann-Eifert, M. Ritala, M. Leskelä

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Samenvatting

[Zr(NEtMe)2(guan-NEtMe2)2], a recently developed compound, was investigated as a novel precursor for the atomic layer deposition (ALD) of ZrO2. With water as the oxygen source, the growth rate remained constant over a wide temperature range, whereas with ozone the growth rate increased steadily with deposition temperature. Both ALD processes were successfully developed: the characteristic self-limiting ALD growth mode was confirmed at 300 °C. The growth rates were exceptionally high, 0.9 and 1.15 Å/cycle with water and ozone, respectively. X-ray diffraction (XRD) indicated that the films were deposited in the high-permittivity cubic phase, even when grown at temperatures as low as 250 °C. Compositional analysis performed by means of X-ray photoelectron spectroscopy (XPS) demonstrated low carbon and nitrogen contamination (
Originele taal-2Engels
Pagina's (van-tot)3088-
TijdschriftChemistry of Materials
Volume25
DOI's
StatusGepubliceerd - 2013

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