Wurtzite gallium phosphide has a direct-band gap

S. Assali; I. Zardo; S. Plissard; M.A. Verheijen; J.E.M. Haverkort; E.P.A.M. Bakkers

doi:10.1109/ICIPRM.2013.6562565

Wurtzite gallium phosphide has a direct-band gap

S. Assali, I. Zardo, S. Plissard, M.A. Verheijen, J.E.M. Haverkort, E.P.A.M. Bakkers

Photonics and Semiconductor Nanophysics

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

Samenvatting

Gallium Phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the emission efficiency. We report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength can be tuned across an important range of the visible light spectrum (555-690nm). This approach of crystal structure engineering enables new pathways for tailoring materials properties enhancing functionality.

Originele taal-2	Engels
Titel	Conference Proceedings - International Conference on Indium Phosphide and Related Materials, IPRM 2013, 19-23 may 2013, Kobe, Japan
Plaats van productie	Piscataway
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	1-2
ISBN van elektronische versie	978-1-4673-6131-6
ISBN van geprinte versie	9781467361309
DOI's	https://doi.org/10.1109/ICIPRM.2013.6562565
Status	Gepubliceerd - 2013
Evenement	25th International Conference on Indium Phosphide and Related Materials (IPRM 2013) - Kobe, Japan Duur: 19 mei 2013 → 23 mei 2013 Congresnummer: 25

Congres

Congres	25th International Conference on Indium Phosphide and Related Materials (IPRM 2013)
Verkorte titel	IPRM 2013
Land	Japan
Stad	Kobe
Periode	19/05/13 → 23/05/13
Ander	25th International Conference on Indium Phosphide and Related materials (IPRM)

Vingerafdruk

Citeer dit

Assali, S., Zardo, I., Plissard, S., Verheijen, M. A., Haverkort, J. E. M., & Bakkers, E. P. A. M. (2013). Wurtzite gallium phosphide has a direct-band gap. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials, IPRM 2013, 19-23 may 2013, Kobe, Japan (blz. 1-2). [MoC3-3] Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ICIPRM.2013.6562565

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title = "Wurtzite gallium phosphide has a direct-band gap",

abstract = "Gallium Phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the emission efficiency. We report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength can be tuned across an important range of the visible light spectrum (555-690nm). This approach of crystal structure engineering enables new pathways for tailoring materials properties enhancing functionality.",

keywords = "Crystal structure, Direct Band Gap, Gallium Phosphide",

author = "S. Assali and I. Zardo and S. Plissard and M.A. Verheijen and J.E.M. Haverkort and E.P.A.M. Bakkers",

year = "2013",

doi = "10.1109/ICIPRM.2013.6562565",

language = "English",

isbn = "9781467361309",

pages = "1--2",

booktitle = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials, IPRM 2013, 19-23 may 2013, Kobe, Japan",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

}

Assali, S, Zardo, I, Plissard, S, Verheijen, MA , Haverkort, JEM & Bakkers, EPAM 2013, Wurtzite gallium phosphide has a direct-band gap. in Conference Proceedings - International Conference on Indium Phosphide and Related Materials, IPRM 2013, 19-23 may 2013, Kobe, Japan., MoC3-3, Institute of Electrical and Electronics Engineers, Piscataway, blz. 1-2, 25th International Conference on Indium Phosphide and Related Materials (IPRM 2013), Kobe, Japan, 19/05/13. https://doi.org/10.1109/ICIPRM.2013.6562565

Wurtzite gallium phosphide has a direct-band gap. / Assali, S.; Zardo, I.; Plissard, S.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.

Conference Proceedings - International Conference on Indium Phosphide and Related Materials, IPRM 2013, 19-23 may 2013, Kobe, Japan. Piscataway : Institute of Electrical and Electronics Engineers, 2013. blz. 1-2 MoC3-3.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Wurtzite gallium phosphide has a direct-band gap

AU - Assali, S.

AU - Zardo, I.

AU - Plissard, S.

AU - Verheijen, M.A.

AU - Haverkort, J.E.M.

AU - Bakkers, E.P.A.M.

PY - 2013

Y1 - 2013

N2 - Gallium Phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the emission efficiency. We report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength can be tuned across an important range of the visible light spectrum (555-690nm). This approach of crystal structure engineering enables new pathways for tailoring materials properties enhancing functionality.

AB - Gallium Phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the emission efficiency. We report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength can be tuned across an important range of the visible light spectrum (555-690nm). This approach of crystal structure engineering enables new pathways for tailoring materials properties enhancing functionality.

KW - Crystal structure

KW - Direct Band Gap

KW - Gallium Phosphide

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U2 - 10.1109/ICIPRM.2013.6562565

DO - 10.1109/ICIPRM.2013.6562565

M3 - Conference contribution

AN - SCOPUS:84882353641

SN - 9781467361309

SP - 1

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BT - Conference Proceedings - International Conference on Indium Phosphide and Related Materials, IPRM 2013, 19-23 may 2013, Kobe, Japan

PB - Institute of Electrical and Electronics Engineers

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ER -

Assali S, Zardo I, Plissard S, Verheijen MA , Haverkort JEM , Bakkers EPAM. Wurtzite gallium phosphide has a direct-band gap. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials, IPRM 2013, 19-23 may 2013, Kobe, Japan. Piscataway: Institute of Electrical and Electronics Engineers. 2013. blz. 1-2. MoC3-3 https://doi.org/10.1109/ICIPRM.2013.6562565

Toegang tot document

10.1109/ICIPRM.2013.6562565

Link to publication in Scopus