Wurtzite gallium phosphide has a direct-band gap

S. Assali, I. Zardo, S. Plissard, M.A. Verheijen, J.E.M. Haverkort, E.P.A.M. Bakkers

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

Gallium Phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the emission efficiency. We report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength can be tuned across an important range of the visible light spectrum (555-690nm). This approach of crystal structure engineering enables new pathways for tailoring materials properties enhancing functionality.

Originele taal-2Engels
TitelConference Proceedings - International Conference on Indium Phosphide and Related Materials, IPRM 2013, 19-23 may 2013, Kobe, Japan
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's1-2
ISBN van elektronische versie978-1-4673-6131-6
ISBN van geprinte versie9781467361309
DOI's
StatusGepubliceerd - 2013
Evenement25th International Conference on Indium Phosphide and Related Materials (IPRM 2013) - Kobe, Japan
Duur: 19 mei 201323 mei 2013
Congresnummer: 25

Congres

Congres25th International Conference on Indium Phosphide and Related Materials (IPRM 2013)
Verkorte titelIPRM 2013
LandJapan
StadKobe
Periode19/05/1323/05/13
Ander25th International Conference on Indium Phosphide and Related materials (IPRM)

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Citeer dit

Assali, S., Zardo, I., Plissard, S., Verheijen, M. A., Haverkort, J. E. M., & Bakkers, E. P. A. M. (2013). Wurtzite gallium phosphide has a direct-band gap. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials, IPRM 2013, 19-23 may 2013, Kobe, Japan (blz. 1-2). [MoC3-3] Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ICIPRM.2013.6562565