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What Limits Mobility in Hydrogenated Indium Oxide?

  • Sebastian Husein
  • , Michael Stuckelberger
  • , Bradley West
  • , Laura Ding
  • , Monica Morales-Masis
  • , Fabien Dauzou
  • , Martial Duchamp
  • , Zachary C. Holman
  • , Mariana Bertoni

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

Understanding the electron scattering mechanisms dominating transport in high and low mobility transparent conducting oxides can provide insight into improving the properties of this crucial photovoltaic device layer. Contributions from ionized impurity scattering, phonon scattering, and grain boundary scattering were measured and quantified in hydrogenated indium oxide thin films, which had varying composition and grain size, resulting in a wide range of carrier densities (∼ 101Scm-3-∼ 1020cm-3) and carrier mobilities (∼ 10 cm2/Vs - > 100 cm2Vs). We used temperature-dependent Hall measurements from 5-300 Kelvin to characterize electrical properties of the sputtered films. Grain boundary scattering dominated films with the lowest mobility, whereas films with > 100 cm2/Vs mobilities were dominated by contributions from ionized impurity scattering and polar optical phonon scattering.

Originele taal-2Engels
Titel2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's1810-1813
Aantal pagina's4
ISBN van elektronische versie9781538685297
DOI's
StatusGepubliceerd - 29 nov 2018
Extern gepubliceerdJa
Evenement7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, Verenigde Staten van Amerika
Duur: 10 jun 201815 jun 2018

Congres

Congres7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Land/RegioVerenigde Staten van Amerika
StadWaikoloa Village
Periode10/06/1815/06/18

Bibliografische nota

Publisher Copyright:
© 2018 IEEE.

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