Wavelength tunable InAs/InP(1 0 0) quantum dots in 1.55-µm telecom devices

S. Anantathanasarn, Y. Barbarin, N.I. Cade, P.J. Veldhoven, van, E.A.J.M. Bente, Y.S. Oei, H. Kamada, M.K. Smit, R. Nötzel

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

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Samenvatting

This paper reviews the growth, characterization and device applications of self-assembled InAs/InP(1 0 0) quantum dots (QDs) formed by MOVPE. The problematic As/P exchange reaction during QD growth is suppressed by the insertion of a GaAs interlayer together with optimum growth conditions. This produces QDs with continuously tunable emission over the 1.55-µm wavelength region for fiber-based telecom applications. Device quality of these QDs is proven by continuous wave lasing at room temperature from the as-cleaved facets of Fabry–Pérot narrow ridge-waveguide lasers implementing widely stacked QDs as gain medium. The low transparency current density of 6 A/cm2 per QD layer and low loss of 4.2 cm-1 are accompanied by a 80-nm wide gain spectrum. The deeply etched QD lasers possess similar threshold current densities as the shallowly etched ones and do not deteriorate with time, revealing that device performance does not suffer from sidewall recombination. This allows the fabrication of mono-mode and more compact devices with small bending radii, as demonstrated by the operation of a QD ring laser with 40-GHz free spectral range. Unpolarized emission from the cleaved side, important for the realization of polarization insensitive semiconductor optical amplifiers, is obtained by close stacking of QDs due to vertical electronic coupling. Sharp exciton–biexciton emission from a single QD around 1.55 µm is observed with clearly resolvable peaks above 70 K, which is required for single photon sources working at liquid nitrogen temperature for fiber-based quantum cryptography systems.
Originele taal-2Engels
TitelE-MRS 2007 Semiconductor Nanostructures towards Electronic and Optoelectronic Device ApplicationsSpring Meeting, May 28 - June 1, 2007, Strasbourg
Pagina's124-130
DOI's
StatusGepubliceerd - 2007
EvenementSemiconductor Nanostructures towards Electronic and Optoelectronic Device Applications , May 28-June 1, 2007, Strasbourg, France - Strasbourg, Frankrijk
Duur: 28 mei 20071 jun 2007

Publicatie series

NaamMaterials Science and Engineering B : Solid-State Materials for Advanced Technology
Nummer2-3
Volume147
ISSN van geprinte versie0921-5107

Congres

CongresSemiconductor Nanostructures towards Electronic and Optoelectronic Device Applications , May 28-June 1, 2007, Strasbourg, France
Land/RegioFrankrijk
StadStrasbourg
Periode28/05/071/06/07
AnderE-MRS 2007, Symposium B : Semiconductor Nanostructures towards Electronics and Optoelectronic Device Applications , Spring Meeting, Strasbourg

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