Warping a single Mn acceptor wavefunction by straining the GaAs host

A.M. Yakunin, A.Y. Silov, P.M. Koenraad, J.-M. Tang, M.E. Flatté, J.L. Primus, W. Roy, van, J. De Boeck, A.M. Monakhov, K.S. Romanov, I.E. Panaiotti, N.S. Averkiev

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58 Citaten (Scopus)


Transition-metal dopants such as Mn determine the ferromagnetism in dilute magnetic semiconductors such as Ga1-xMnxAs. Recently, the acceptor states of Mn dopants in GaAs were found to be highly anisotropic owing to the symmetry of the host crystal. Here, we show how the shape of such a state can be modified by local strain. The Mn acceptors near InAs quantum dots are mapped at room temperature by scanning tunnelling microscopy. Dramatic distortions and a reduction in the symmetry of the wavefunction of the hole bound to the Mn acceptor are observed originating from strain induced by quantum dots. Calculations of the acceptor-state wavefunction in the presence of strain, within a tight-binding model and within an effective-mass model, agree with the experimentally observed shape. The magnetic easy axes of strained lightly doped Ga1-xMnxAs can be explained on the basis of the observed local density of states for the single Mn spin
Originele taal-2Engels
Pagina's (van-tot)512-515
Aantal pagina's4
TijdschriftNature Materials
Nummer van het tijdschrift7
StatusGepubliceerd - 2007

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    Yakunin, A. M., Silov, A. Y., Koenraad, P. M., Tang, J-M., Flatté, M. E., Primus, J. L., Roy, van, W., De Boeck, J., Monakhov, A. M., Romanov, K. S., Panaiotti, I. E., & Averkiev, N. S. (2007). Warping a single Mn acceptor wavefunction by straining the GaAs host. Nature Materials, 6(7), 512-515. https://doi.org/10.1038/nmat1936