W-CMP for sub-micron inverse metallisation

Herma Van Kranenburg; Herman D. Van Corbach; Pierre H. Woerlee; Martin Lohmeier

doi:10.1016/S0167-9317(96)00050-0

W-CMP for sub-micron inverse metallisation

Herma Van Kranenburg
, Herman D. Van Corbach
, Pierre H. Woerlee
, Martin Lohmeier

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

15 Citaten (Scopus)

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Chemical Mechanical Polishing (CMP) of tungsten for an inverse metallisation scheme is investigated. The influence of CMP parameters on removal rate and uniformity is studied. The main effects on the removal rate are the applied pressure and the rotation rate of the polishing pad. To the first order Preston's equation is obeyed. The uniformity is best with equal rpm of pad and wafer and with perforated pads. Also, pattern density effects of CMP of W/PETEOS are investigated. Dishing increased at larger W-linewidth. Oxide erosion increased at larger pattern density and smaller W-linewidth. Electrical measurements on submicron (0.4 and 0.5 μm) test structures yielded good CMP results.

Originele taal-2	Engels
Pagina's (van-tot)	241-248
Aantal pagina's	8
Tijdschrift	Microelectronic Engineering
Volume	33
Nummer van het tijdschrift	1-4
DOI's	https://doi.org/10.1016/S0167-9317(96)00050-0
Status	Gepubliceerd - jan. 1997
Extern gepubliceerd	Ja

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title = "W-CMP for sub-micron inverse metallisation",

abstract = "Chemical Mechanical Polishing (CMP) of tungsten for an inverse metallisation scheme is investigated. The influence of CMP parameters on removal rate and uniformity is studied. The main effects on the removal rate are the applied pressure and the rotation rate of the polishing pad. To the first order Preston's equation is obeyed. The uniformity is best with equal rpm of pad and wafer and with perforated pads. Also, pattern density effects of CMP of W/PETEOS are investigated. Dishing increased at larger W-linewidth. Oxide erosion increased at larger pattern density and smaller W-linewidth. Electrical measurements on submicron (0.4 and 0.5 μm) test structures yielded good CMP results.",

author = "\{Van Kranenburg\}, Herma and \{Van Corbach\}, \{Herman D.\} and Woerlee, \{Pierre H.\} and Martin Lohmeier",

year = "1997",

month = jan,

doi = "10.1016/S0167-9317(96)00050-0",

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journal = "Microelectronic Engineering",

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AU - Van Kranenburg, Herma

AU - Van Corbach, Herman D.

AU - Woerlee, Pierre H.

AU - Lohmeier, Martin

PY - 1997/1

Y1 - 1997/1

N2 - Chemical Mechanical Polishing (CMP) of tungsten for an inverse metallisation scheme is investigated. The influence of CMP parameters on removal rate and uniformity is studied. The main effects on the removal rate are the applied pressure and the rotation rate of the polishing pad. To the first order Preston's equation is obeyed. The uniformity is best with equal rpm of pad and wafer and with perforated pads. Also, pattern density effects of CMP of W/PETEOS are investigated. Dishing increased at larger W-linewidth. Oxide erosion increased at larger pattern density and smaller W-linewidth. Electrical measurements on submicron (0.4 and 0.5 μm) test structures yielded good CMP results.

AB - Chemical Mechanical Polishing (CMP) of tungsten for an inverse metallisation scheme is investigated. The influence of CMP parameters on removal rate and uniformity is studied. The main effects on the removal rate are the applied pressure and the rotation rate of the polishing pad. To the first order Preston's equation is obeyed. The uniformity is best with equal rpm of pad and wafer and with perforated pads. Also, pattern density effects of CMP of W/PETEOS are investigated. Dishing increased at larger W-linewidth. Oxide erosion increased at larger pattern density and smaller W-linewidth. Electrical measurements on submicron (0.4 and 0.5 μm) test structures yielded good CMP results.

UR - https://www.scopus.com/pages/publications/0041163674

U2 - 10.1016/S0167-9317(96)00050-0

DO - 10.1016/S0167-9317(96)00050-0

M3 - Article

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VL - 33

SP - 241

EP - 248

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

W-CMP for sub-micron inverse metallisation

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