Voltage-gated pinning in a magnetic domain-wall conduit

J.H. Franken; Y. Yin; A.J. Schellekens; A. Brink, van den; H.J.M. Swagten; B. Koopmans

doi:10.1063/1.4819771

Voltage-gated pinning in a magnetic domain-wall conduit

J.H. Franken, Y. Yin, A.J. Schellekens, A. Brink, van den, H.J.M. Swagten, B. Koopmans

Physics of Nanostructures

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

14 Citaten (Scopus)

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Samenvatting

In spintronic devices relying on magnetic domain-wall (DW) motion, robust control over the DW position is required. We use electric-field control of perpendicular magnetic anisotropy to create a voltage-gated pinning site in a microstructured Pt/Co/AlOx DW conduit. A DW pins at the edge of a gate electrode, and the strength of pinning can be tuned linearly and reversibly with an efficiency of 0.22(1) mT/V. This result is supported by a micromagnetic model, taking full account of the anisotropy step at the gate edge, which is directly caused by a change in the electron density due to the choice of material.

Originele taal-2	Engels
Artikelnummer	102411
Pagina's (van-tot)	102411-1/5
Aantal pagina's	5
Tijdschrift	Applied Physics Letters
Volume	103
Nummer van het tijdschrift	10
DOI's	https://doi.org/10.1063/1.4819771
Status	Gepubliceerd - 2014

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AU - Franken, J.H.

AU - Yin, Y.

AU - Schellekens, A.J.

AU - Brink, van den, A.

AU - Swagten, H.J.M.

AU - Koopmans, B.

PY - 2014

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N2 - In spintronic devices relying on magnetic domain-wall (DW) motion, robust control over the DW position is required. We use electric-field control of perpendicular magnetic anisotropy to create a voltage-gated pinning site in a microstructured Pt/Co/AlOx DW conduit. A DW pins at the edge of a gate electrode, and the strength of pinning can be tuned linearly and reversibly with an efficiency of 0.22(1) mT/V. This result is supported by a micromagnetic model, taking full account of the anisotropy step at the gate edge, which is directly caused by a change in the electron density due to the choice of material.

AB - In spintronic devices relying on magnetic domain-wall (DW) motion, robust control over the DW position is required. We use electric-field control of perpendicular magnetic anisotropy to create a voltage-gated pinning site in a microstructured Pt/Co/AlOx DW conduit. A DW pins at the edge of a gate electrode, and the strength of pinning can be tuned linearly and reversibly with an efficiency of 0.22(1) mT/V. This result is supported by a micromagnetic model, taking full account of the anisotropy step at the gate edge, which is directly caused by a change in the electron density due to the choice of material.

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