Samenvatting
Using aluminum oxide (Al2O3) films deposited by high-rate spatial atomic layer deposition (ALD), we achieve very low surface recombination velocities of 6.5 cm/s on p-type and 8.1 cm/s on n-type crystalline silicon wafers. Using spatially separated reaction zones instead of the conventional time-sequenced precursor dosing enables growth rates up to 70 nm/min, whereas conventional ALD limits the growth rate to
Originele taal-2 | Engels |
---|---|
Artikelnummer | 162103 |
Pagina's (van-tot) | 162103-1/3 |
Tijdschrift | Applied Physics Letters |
Volume | 97 |
Nummer van het tijdschrift | 16 |
DOI's | |
Status | Gepubliceerd - 2010 |