Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide

F. Werner; B. Veith; M.V. Tiba; P. Poodt; F. Roozeboom; R. Brendel; J. Schmidt

doi:10.1063/1.3505311

Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide

F. Werner, B. Veith, M.V. Tiba, P. Poodt, F. Roozeboom, R. Brendel, J. Schmidt

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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Samenvatting

Using aluminum oxide (Al2O3) films deposited by high-rate spatial atomic layer deposition (ALD), we achieve very low surface recombination velocities of 6.5 cm/s on p-type and 8.1 cm/s on n-type crystalline silicon wafers. Using spatially separated reaction zones instead of the conventional time-sequenced precursor dosing enables growth rates up to 70 nm/min, whereas conventional ALD limits the growth rate to

Originele taal-2	Engels
Artikelnummer	162103
Pagina's (van-tot)	162103-1/3
Tijdschrift	Applied Physics Letters
Volume	97
Nummer van het tijdschrift	16
DOI's	https://doi.org/10.1063/1.3505311
Status	Gepubliceerd - 2010

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@article{d3d1f9a8f7b7447ebb4073d1c7b29b61,

title = "Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide",

abstract = "Using aluminum oxide (Al2O3) films deposited by high-rate spatial atomic layer deposition (ALD), we achieve very low surface recombination velocities of 6.5 cm/s on p-type and 8.1 cm/s on n-type crystalline silicon wafers. Using spatially separated reaction zones instead of the conventional time-sequenced precursor dosing enables growth rates up to 70 nm/min, whereas conventional ALD limits the growth rate to",

author = "F. Werner and B. Veith and M.V. Tiba and P. Poodt and F. Roozeboom and R. Brendel and J. Schmidt",

year = "2010",

doi = "10.1063/1.3505311",

language = "English",

volume = "97",

pages = "162103--1/3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide. / Werner, F.; Veith, B.; Tiba, M.V.; Poodt, P.; Roozeboom, F.; Brendel, R.; Schmidt, J.

In: Applied Physics Letters, Vol. 97, Nr. 16, 162103, 2010, blz. 162103-1/3.

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

TY - JOUR

T1 - Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide

AU - Werner, F.

AU - Veith, B.

AU - Tiba, M.V.

AU - Poodt, P.

AU - Roozeboom, F.

AU - Brendel, R.

AU - Schmidt, J.

PY - 2010

Y1 - 2010

N2 - Using aluminum oxide (Al2O3) films deposited by high-rate spatial atomic layer deposition (ALD), we achieve very low surface recombination velocities of 6.5 cm/s on p-type and 8.1 cm/s on n-type crystalline silicon wafers. Using spatially separated reaction zones instead of the conventional time-sequenced precursor dosing enables growth rates up to 70 nm/min, whereas conventional ALD limits the growth rate to

AB - Using aluminum oxide (Al2O3) films deposited by high-rate spatial atomic layer deposition (ALD), we achieve very low surface recombination velocities of 6.5 cm/s on p-type and 8.1 cm/s on n-type crystalline silicon wafers. Using spatially separated reaction zones instead of the conventional time-sequenced precursor dosing enables growth rates up to 70 nm/min, whereas conventional ALD limits the growth rate to

U2 - 10.1063/1.3505311

DO - 10.1063/1.3505311

M3 - Article

VL - 97

SP - 162103-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

M1 - 162103

ER -