Variability study of MWCNT local interconnects considering defects and contact resistances-Part II: Impact of charge transfer doping

Rongmei Chen; Jie Liang; Jaehyun Lee; Vihar P. Georgiev; Raphael Ramos; Hanako Okuno; Dipankar Kalita; Yuanqing Cheng; Liuyang Zhang; Reetu R. Pandey; Salvatore Amoroso; Campbell Millar; Asen Asenov; Jean Dijon; Aida Todri-Sanial

doi:10.1109/TED.2018.2868424

Variability study of MWCNT local interconnects considering defects and contact resistances-Part II: Impact of charge transfer doping

Rongmei Chen
, Jie Liang
, Jaehyun Lee
, Vihar P. Georgiev
, Raphael Ramos
, Hanako Okuno
, Dipankar Kalita
, Yuanqing Cheng
, Liuyang Zhang
, Reetu R. Pandey
, Salvatore Amoroso
, Campbell Millar
, Asen Asenov
, Jean Dijon
, Aida Todri-Sanial

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

8 Citaten (Scopus)

Samenvatting

In this paper, the impact of charge transfer doping on the variability of multiwalled carbon nanotube (MWCNT) local interconnects is studied by experiments and simulations. We calculate the number of conducting channels of both metallic and semiconducting carbon nanotubes as a function of Fermi level shift due to doping based on the calculation of transmission coefficients. By using the MWCNT compact model proposed in Part I of this paper, we study the charge transfer doping of MWCNTs employing Fermi level shift to reduce the performance variability due to changes in diameter, chirality, defects, and contact resistance. Simulation results show that charge transfer doping can significantly improve MWCNT interconnect performance and variability by increasing the number of conducting channels of shells and degenerating semiconducting shells to metallic shells. As a case study on an MWCNT of 11 nm outer diameter, when the Fermi level shifts to 0.1 eV, up to 80% of performance and standard deviation improvements are observed. Furthermore, a good match between experimental data and simulation results is observed, demonstrating the effectiveness of doping, the validity of the MWCNT compact model and proposed simulation methodology.

Originele taal-2	Engels
Artikelnummer	8466013
Pagina's (van-tot)	4963-4970
Aantal pagina's	8
Tijdschrift	IEEE Transactions on Electron Devices
Volume	65
Nummer van het tijdschrift	11
DOI's	https://doi.org/10.1109/TED.2018.2868424
Status	Gepubliceerd - nov. 2018
Extern gepubliceerd	Ja

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© 2018 IEEE.

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Manuscript received May 7, 2018; revised July 11, 2018; accepted August 26, 2018. Date of publication September 14, 2018; date of current version October 22, 2018. This work was supported by the European Commission H2020 CONNECT Project under Grant 688612. The review of this paper was arranged by Editor M. S. Bakir. (Corresponding author: Rongmei Chen.) R. Chen , J. Liang, R. R. Pandey, and A. Todri-Sanial are with the Microelectronics Department, LIRMM, CNRS, University of Mont-pellier, 34095 Montpellier, France (e-mail: [email protected]; [email protected]). J. Lee, V. P. Georgiev, and A. Asenov are with the School of Engineering, University of Glasgow, Glasgow G12 8QQ, U.K. R. Ramos and J. Dijon are with CEA-LITEN, University Grenoble Alpes, 38000 Grenoble, France. H. Okuno and D. Kalita are with CEA-INAC, University Grenoble Alpes, 38000 Grenoble, France. Y. Cheng and L. Zhang are with the School of Electronic and Information Engineering, Beihang University, Beijing 100191, China. S. Amoroso and C. Millar are with Synopsys Ltd., Glasgow, U.K. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TED.2018.2868424

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Chen, R., Liang, J., Lee, J., Georgiev, V. P., Ramos, R., Okuno, H., Kalita, D., Cheng, Y., Zhang, L., Pandey, R. R., Amoroso, S., Millar, C., Asenov, A., Dijon, J., & Todri-Sanial, A. (2018). Variability study of MWCNT local interconnects considering defects and contact resistances-Part II: Impact of charge transfer doping. IEEE Transactions on Electron Devices, 65(11), 4963-4970. Artikel 8466013. https://doi.org/10.1109/TED.2018.2868424

@article{1dc5e93dc11f4878b4b12ee1defb0614,

title = "Variability study of MWCNT local interconnects considering defects and contact resistances-Part II: Impact of charge transfer doping",

abstract = "In this paper, the impact of charge transfer doping on the variability of multiwalled carbon nanotube (MWCNT) local interconnects is studied by experiments and simulations. We calculate the number of conducting channels of both metallic and semiconducting carbon nanotubes as a function of Fermi level shift due to doping based on the calculation of transmission coefficients. By using the MWCNT compact model proposed in Part I of this paper, we study the charge transfer doping of MWCNTs employing Fermi level shift to reduce the performance variability due to changes in diameter, chirality, defects, and contact resistance. Simulation results show that charge transfer doping can significantly improve MWCNT interconnect performance and variability by increasing the number of conducting channels of shells and degenerating semiconducting shells to metallic shells. As a case study on an MWCNT of 11 nm outer diameter, when the Fermi level shifts to 0.1 eV, up to 80\% of performance and standard deviation improvements are observed. Furthermore, a good match between experimental data and simulation results is observed, demonstrating the effectiveness of doping, the validity of the MWCNT compact model and proposed simulation methodology.",

keywords = "Charge transfer doping, defects, Fermi level, Monte Carlo (MC) simulation, multiwalled carbon nanotubes (MWCNTs), variability",

author = "Rongmei Chen and Jie Liang and Jaehyun Lee and Georgiev, \{Vihar P.\} and Raphael Ramos and Hanako Okuno and Dipankar Kalita and Yuanqing Cheng and Liuyang Zhang and Pandey, \{Reetu R.\} and Salvatore Amoroso and Campbell Millar and Asen Asenov and Jean Dijon and Aida Todri-Sanial",

note = "Funding Information: Manuscript received May 7, 2018; revised July 11, 2018; accepted August 26, 2018. Date of publication September 14, 2018; date of current version October 22, 2018. This work was supported by the European Commission H2020 CONNECT Project under Grant 688612. The review of this paper was arranged by Editor M. S. Bakir. (Corresponding author: Rongmei Chen.) R. Chen , J. Liang, R. R. Pandey, and A. Todri-Sanial are with the Microelectronics Department, LIRMM, CNRS, University of Mont-pellier, 34095 Montpellier, France (e-mail: [email protected]; [email protected]). J. Lee, V. P. Georgiev, and A. Asenov are with the School of Engineering, University of Glasgow, Glasgow G12 8QQ, U.K. R. Ramos and J. Dijon are with CEA-LITEN, University Grenoble Alpes, 38000 Grenoble, France. H. Okuno and D. Kalita are with CEA-INAC, University Grenoble Alpes, 38000 Grenoble, France. Y. Cheng and L. Zhang are with the School of Electronic and Information Engineering, Beihang University, Beijing 100191, China. S. Amoroso and C. Millar are with Synopsys Ltd., Glasgow, U.K. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TED.2018.2868424 ",

year = "2018",

month = nov,

doi = "10.1109/TED.2018.2868424",

language = "English",

volume = "65",

pages = "4963--4970",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

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}

Chen, R, Liang, J, Lee, J, Georgiev, VP, Ramos, R, Okuno, H, Kalita, D, Cheng, Y, Zhang, L, Pandey, RR, Amoroso, S, Millar, C, Asenov, A, Dijon, J & Todri-Sanial, A 2018, 'Variability study of MWCNT local interconnects considering defects and contact resistances-Part II: Impact of charge transfer doping', IEEE Transactions on Electron Devices, vol. 65, nr. 11, 8466013, blz. 4963-4970. https://doi.org/10.1109/TED.2018.2868424

Variability study of MWCNT local interconnects considering defects and contact resistances-Part II: Impact of charge transfer doping. / Chen, Rongmei; Liang, Jie; Lee, Jaehyun et al.
In: IEEE Transactions on Electron Devices, Vol. 65, Nr. 11, 8466013, 11.2018, blz. 4963-4970.

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

TY - JOUR

T1 - Variability study of MWCNT local interconnects considering defects and contact resistances-Part II

T2 - Impact of charge transfer doping

AU - Chen, Rongmei

AU - Liang, Jie

AU - Lee, Jaehyun

AU - Georgiev, Vihar P.

AU - Ramos, Raphael

AU - Okuno, Hanako

AU - Kalita, Dipankar

AU - Cheng, Yuanqing

AU - Zhang, Liuyang

AU - Pandey, Reetu R.

AU - Amoroso, Salvatore

AU - Millar, Campbell

AU - Asenov, Asen

AU - Dijon, Jean

AU - Todri-Sanial, Aida

N1 - Funding Information: Manuscript received May 7, 2018; revised July 11, 2018; accepted August 26, 2018. Date of publication September 14, 2018; date of current version October 22, 2018. This work was supported by the European Commission H2020 CONNECT Project under Grant 688612. The review of this paper was arranged by Editor M. S. Bakir. (Corresponding author: Rongmei Chen.) R. Chen , J. Liang, R. R. Pandey, and A. Todri-Sanial are with the Microelectronics Department, LIRMM, CNRS, University of Mont-pellier, 34095 Montpellier, France (e-mail: [email protected]; [email protected]). J. Lee, V. P. Georgiev, and A. Asenov are with the School of Engineering, University of Glasgow, Glasgow G12 8QQ, U.K. R. Ramos and J. Dijon are with CEA-LITEN, University Grenoble Alpes, 38000 Grenoble, France. H. Okuno and D. Kalita are with CEA-INAC, University Grenoble Alpes, 38000 Grenoble, France. Y. Cheng and L. Zhang are with the School of Electronic and Information Engineering, Beihang University, Beijing 100191, China. S. Amoroso and C. Millar are with Synopsys Ltd., Glasgow, U.K. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TED.2018.2868424

PY - 2018/11

Y1 - 2018/11

N2 - In this paper, the impact of charge transfer doping on the variability of multiwalled carbon nanotube (MWCNT) local interconnects is studied by experiments and simulations. We calculate the number of conducting channels of both metallic and semiconducting carbon nanotubes as a function of Fermi level shift due to doping based on the calculation of transmission coefficients. By using the MWCNT compact model proposed in Part I of this paper, we study the charge transfer doping of MWCNTs employing Fermi level shift to reduce the performance variability due to changes in diameter, chirality, defects, and contact resistance. Simulation results show that charge transfer doping can significantly improve MWCNT interconnect performance and variability by increasing the number of conducting channels of shells and degenerating semiconducting shells to metallic shells. As a case study on an MWCNT of 11 nm outer diameter, when the Fermi level shifts to 0.1 eV, up to 80% of performance and standard deviation improvements are observed. Furthermore, a good match between experimental data and simulation results is observed, demonstrating the effectiveness of doping, the validity of the MWCNT compact model and proposed simulation methodology.

AB - In this paper, the impact of charge transfer doping on the variability of multiwalled carbon nanotube (MWCNT) local interconnects is studied by experiments and simulations. We calculate the number of conducting channels of both metallic and semiconducting carbon nanotubes as a function of Fermi level shift due to doping based on the calculation of transmission coefficients. By using the MWCNT compact model proposed in Part I of this paper, we study the charge transfer doping of MWCNTs employing Fermi level shift to reduce the performance variability due to changes in diameter, chirality, defects, and contact resistance. Simulation results show that charge transfer doping can significantly improve MWCNT interconnect performance and variability by increasing the number of conducting channels of shells and degenerating semiconducting shells to metallic shells. As a case study on an MWCNT of 11 nm outer diameter, when the Fermi level shifts to 0.1 eV, up to 80% of performance and standard deviation improvements are observed. Furthermore, a good match between experimental data and simulation results is observed, demonstrating the effectiveness of doping, the validity of the MWCNT compact model and proposed simulation methodology.

KW - Charge transfer doping

KW - defects

KW - Fermi level

KW - Monte Carlo (MC) simulation

KW - multiwalled carbon nanotubes (MWCNTs)

KW - variability

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DO - 10.1109/TED.2018.2868424

M3 - Article

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SN - 0018-9383

VL - 65

SP - 4963

EP - 4970

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

M1 - 8466013

ER -

Variability study of MWCNT local interconnects considering defects and contact resistances-Part II: Impact of charge transfer doping

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