Using hot wire and initiated chemical vapor deposition for gas barrier thin film encapsulation

D.A. Spee; J.K. Rath; R.E.I. Schropp

doi:10.1016/j.tsf.2014.10.029

Using hot wire and initiated chemical vapor deposition for gas barrier thin film encapsulation

D.A. Spee, J.K. Rath, R.E.I. Schropp

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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Hot wire CVD (HWCVD) and initiated CVD (iCVD) are very well suited deposition techniques for the fabrication of transparent thin film gas barriers. Single inorganic or organic layers, however, face challenges, which are hard to overcome: unavoidable defects and low intrinsic barrier function. We demonstrate that by combining inorganic HWCVD films and organic iCVD films, a water vapor transmission rate a low as 5 * 10- 6 g/m2/day at 60 °C and 90% RH for a simple pinhole free three layer structure is obtained even with non-optimized individual layers. Given the 100 °C deposition temperature, the layer stacks can be deposited on any sensitive electronic device.

Originele taal-2	Engels
Artikelnummer	67-71
Tijdschrift	Thin Solid Films
Volume	575
Vroegere onlinedatum	2014
DOI's	https://doi.org/10.1016/j.tsf.2014.10.029
Status	Gepubliceerd - 2015
Extern gepubliceerd	Ja
Evenement	7th International Conference on Hot-Wire Chemical Vapor Deposition (HWCVD 2012) - Osaka, Japan Duur: 8 okt. 2012 → 12 okt. 2012 Congresnummer: 7

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@article{4876b485a06946d3a56c1c1cf4891d6e,

title = "Using hot wire and initiated chemical vapor deposition for gas barrier thin film encapsulation",

abstract = "Hot wire CVD (HWCVD) and initiated CVD (iCVD) are very well suited deposition techniques for the fabrication of transparent thin film gas barriers. Single inorganic or organic layers, however, face challenges, which are hard to overcome: unavoidable defects and low intrinsic barrier function. We demonstrate that by combining inorganic HWCVD films and organic iCVD films, a water vapor transmission rate a low as 5 * 10- 6 g/m2/day at 60 °C and 90% RH for a simple pinhole free three layer structure is obtained even with non-optimized individual layers. Given the 100 °C deposition temperature, the layer stacks can be deposited on any sensitive electronic device.",

author = "D.A. Spee and J.K. Rath and R.E.I. Schropp",

year = "2015",

doi = "10.1016/j.tsf.2014.10.029",

language = "English",

volume = "575",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

note = "7th International Conference on Hot-Wire Chemical Vapor Deposition (HWCVD 2012), HWCVD 2012 ; Conference date: 08-10-2012 Through 12-10-2012",

}

TY - JOUR

T1 - Using hot wire and initiated chemical vapor deposition for gas barrier thin film encapsulation

AU - Spee, D.A.

AU - Rath, J.K.

AU - Schropp, R.E.I.

N1 - Conference code: 7

PY - 2015

Y1 - 2015

N2 - Hot wire CVD (HWCVD) and initiated CVD (iCVD) are very well suited deposition techniques for the fabrication of transparent thin film gas barriers. Single inorganic or organic layers, however, face challenges, which are hard to overcome: unavoidable defects and low intrinsic barrier function. We demonstrate that by combining inorganic HWCVD films and organic iCVD films, a water vapor transmission rate a low as 5 * 10- 6 g/m2/day at 60 °C and 90% RH for a simple pinhole free three layer structure is obtained even with non-optimized individual layers. Given the 100 °C deposition temperature, the layer stacks can be deposited on any sensitive electronic device.

AB - Hot wire CVD (HWCVD) and initiated CVD (iCVD) are very well suited deposition techniques for the fabrication of transparent thin film gas barriers. Single inorganic or organic layers, however, face challenges, which are hard to overcome: unavoidable defects and low intrinsic barrier function. We demonstrate that by combining inorganic HWCVD films and organic iCVD films, a water vapor transmission rate a low as 5 * 10- 6 g/m2/day at 60 °C and 90% RH for a simple pinhole free three layer structure is obtained even with non-optimized individual layers. Given the 100 °C deposition temperature, the layer stacks can be deposited on any sensitive electronic device.

U2 - 10.1016/j.tsf.2014.10.029

DO - 10.1016/j.tsf.2014.10.029

M3 - Article

SN - 0040-6090

VL - 575

JO - Thin Solid Films

JF - Thin Solid Films

M1 - 67-71

T2 - 7th International Conference on Hot-Wire Chemical Vapor Deposition (HWCVD 2012)

Y2 - 8 October 2012 through 12 October 2012

ER -

Using hot wire and initiated chemical vapor deposition for gas barrier thin film encapsulation

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