Using hot wire and initiated chemical vapor deposition for gas barrier thin film encapsulation

D.A. Spee, J.K. Rath, R.E.I. Schropp

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

22 Citaten (Scopus)
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Samenvatting

Hot wire CVD (HWCVD) and initiated CVD (iCVD) are very well suited deposition techniques for the fabrication of transparent thin film gas barriers. Single inorganic or organic layers, however, face challenges, which are hard to overcome: unavoidable defects and low intrinsic barrier function. We demonstrate that by combining inorganic HWCVD films and organic iCVD films, a water vapor transmission rate a low as 5 * 10- 6 g/m2/day at 60 °C and 90% RH for a simple pinhole free three layer structure is obtained even with non-optimized individual layers. Given the 100 °C deposition temperature, the layer stacks can be deposited on any sensitive electronic device.
Originele taal-2Engels
Artikelnummer67-71
TijdschriftThin Solid Films
Volume575
Vroegere onlinedatum2014
DOI's
StatusGepubliceerd - 2015
Extern gepubliceerdJa
Evenement7th International Conference on Hot-Wire Chemical Vapor Deposition (HWCVD 2012) - Osaka, Japan
Duur: 8 okt 201212 okt 2012
Congresnummer: 7

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