Unveiling Planar Defects in Hexagonal Group IV Materials

Elham M.T. Fadaly; Anna Marzegalli; Yizhen Ren; Lin Sun; Alain Dijkstra; Diego De Matteis; Emilio Scalise; Andrey Sarikov; Marta De Luca; Riccardo Rurali; Jos E.M. Haverkort; Silvana Botti; Leo Miglio; Erik P.A.M. Bakkers; Marcel A. Verheijen

doi:10.1021/acs.nanolett.1c00683

Unveiling Planar Defects in Hexagonal Group IV Materials

Elham M.T. Fadaly, Anna Marzegalli, Yizhen Ren, Lin Sun, Alain Dijkstra, Diego De Matteis, Emilio Scalise, Andrey Sarikov, Marta De Luca, Riccardo Rurali, Jos E.M. Haverkort, Silvana Botti, Leo Miglio, Erik P.A.M. Bakkers, Marcel A. Verheijen (Corresponding author)

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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Samenvatting

Recently synthesized hexagonal group IV materials are a promising platform to realize efficient light emission that is closely integrated with electronics. A high crystal quality is essential to assess the intrinsic electronic and optical properties of these materials unaffected by structural defects. Here, we identify a previously unknown partial planar defect in materials with a type I3 basal stacking fault and investigate its structural and electronic properties. Electron microscopy and atomistic modeling are used to reconstruct and visualize this stacking fault and its terminating dislocations in the crystal. From band structure calculations coupled to photoluminescence measurements, we conclude that the I3 defect does not create states within the hex-Ge and hex-Si band gap. Therefore, the defect is not detrimental to the optoelectronic properties of the hex-SiGe materials family. Finally, highlighting the properties of this defect can be of great interest to the community of hex-III-Ns, where this defect is also present.

Originele taal-2	Engels
Pagina's (van-tot)	3619-3625
Aantal pagina's	7
Tijdschrift	Nano Letters
Volume	21
Nummer van het tijdschrift	8
DOI's	https://doi.org/10.1021/acs.nanolett.1c00683
Status	Gepubliceerd - 28 apr. 2021

Bibliografische nota

Funding Information:
This project has received funding from the European Union’s Horizon 2020 research and innovation program under Grant agreement no. 735008 (SiLAS). I.Z. acknowledges financial support from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation program (Grant agreement no. 756365). M.D.L. acknowledges support from the Swiss National Science Foundation Ambizione grant (Grant no. PZ00P2_179801). R.R. acknowledges financial support by the Ministerio de Economía, Industria y Competitividad (MINECO) under Grant FEDER-MAT2017–90024-P, by the Severo Ochoa Centres of Excellence Program under Grant SEV-2015–049,6 and by the Generalitat de Catalunya under Grant no. 2017 SGR 1506. L.S. acknowledges financial support from the China Scholarship Council. S.B. acknowledges funding from the Volkswagen Stiftung (Momentum) through the project “Dandelion” and the DFG through projects SFB-1375 and BO4280/8-1. Computational resources were also provided by the Leibniz Supercomputing Center through projects pr48je and pr62ja.

Publisher Copyright:
© 2021 The Authors. Published by American Chemical Society.

Financiering

This project has received funding from the European Union’s Horizon 2020 research and innovation program under Grant agreement no. 735008 (SiLAS). I.Z. acknowledges financial support from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation program (Grant agreement no. 756365). M.D.L. acknowledges support from the Swiss National Science Foundation Ambizione grant (Grant no. PZ00P2_179801). R.R. acknowledges financial support by the Ministerio de Economía, Industria y Competitividad (MINECO) under Grant FEDER-MAT2017–90024-P, by the Severo Ochoa Centres of Excellence Program under Grant SEV-2015–049,6 and by the Generalitat de Catalunya under Grant no. 2017 SGR 1506. L.S. acknowledges financial support from the China Scholarship Council. S.B. acknowledges funding from the Volkswagen Stiftung (Momentum) through the project “Dandelion” and the DFG through projects SFB-1375 and BO4280/8-1. Computational resources were also provided by the Leibniz Supercomputing Center through projects pr48je and pr62ja.

Financiers	Financiernummer
SiLAS
Horizon 2020 Framework Programme	756365, 735008
European Research Council
Deutsche Forschungsgemeinschaft	SFB-1375, BO4280/8-1
Volkswagen Foundation
Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung	PZ00P2_179801
Generalitat de Catalunya	2017 SGR 1506
Ministerio de Economía y Competitividad	SEV-2015–049,6, FEDER-MAT2017–90024-P
China Scholarship Council
Ministerio de Economía y Competitividad del Gobierno de España

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10.1021/acs.nanolett.1c00683

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Dataset for "Unveiling Planar Defects in Hexagonal Group IV Materials "
Fadaly, E. (Ontwerper), Marzegalli, A. (Ontwerper), Ren, Y. (Ontwerper), Dijkstra, A. (Ontwerper), De Matteis, D. (Bijdrager), Scalise, E. (Ontwerper), Sarikov, A. (Ontwerper), De Luca, M. (Ontwerper), Rurali, R. (Ontwerper), Zardo, I. (Ontwerper), Haverkort, J. E. M. (Ontwerper), Botti, S. (Ontwerper), Miglio, L. (Ontwerper), Bakkers, E. P. A. M. (Ontwerper) & Verheijen, M. A. (Ontwerper), 4TU.Centre for Research Data, 30 jun. 2021
DOI: 10.4121/14846988, https://data.4tu.nl/articles/_/14846988
Dataset

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title = "Unveiling Planar Defects in Hexagonal Group IV Materials",

abstract = "Recently synthesized hexagonal group IV materials are a promising platform to realize efficient light emission that is closely integrated with electronics. A high crystal quality is essential to assess the intrinsic electronic and optical properties of these materials unaffected by structural defects. Here, we identify a previously unknown partial planar defect in materials with a type I3 basal stacking fault and investigate its structural and electronic properties. Electron microscopy and atomistic modeling are used to reconstruct and visualize this stacking fault and its terminating dislocations in the crystal. From band structure calculations coupled to photoluminescence measurements, we conclude that the I3 defect does not create states within the hex-Ge and hex-Si band gap. Therefore, the defect is not detrimental to the optoelectronic properties of the hex-SiGe materials family. Finally, highlighting the properties of this defect can be of great interest to the community of hex-III-Ns, where this defect is also present. ",

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AU - Fadaly, Elham M.T.

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AU - De Matteis, Diego

AU - Scalise, Emilio

AU - Sarikov, Andrey

AU - De Luca, Marta

AU - Rurali, Riccardo

AU - Haverkort, Jos E.M.

AU - Botti, Silvana

AU - Miglio, Leo

AU - Bakkers, Erik P.A.M.

AU - Verheijen, Marcel A.

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N2 - Recently synthesized hexagonal group IV materials are a promising platform to realize efficient light emission that is closely integrated with electronics. A high crystal quality is essential to assess the intrinsic electronic and optical properties of these materials unaffected by structural defects. Here, we identify a previously unknown partial planar defect in materials with a type I3 basal stacking fault and investigate its structural and electronic properties. Electron microscopy and atomistic modeling are used to reconstruct and visualize this stacking fault and its terminating dislocations in the crystal. From band structure calculations coupled to photoluminescence measurements, we conclude that the I3 defect does not create states within the hex-Ge and hex-Si band gap. Therefore, the defect is not detrimental to the optoelectronic properties of the hex-SiGe materials family. Finally, highlighting the properties of this defect can be of great interest to the community of hex-III-Ns, where this defect is also present.

AB - Recently synthesized hexagonal group IV materials are a promising platform to realize efficient light emission that is closely integrated with electronics. A high crystal quality is essential to assess the intrinsic electronic and optical properties of these materials unaffected by structural defects. Here, we identify a previously unknown partial planar defect in materials with a type I3 basal stacking fault and investigate its structural and electronic properties. Electron microscopy and atomistic modeling are used to reconstruct and visualize this stacking fault and its terminating dislocations in the crystal. From band structure calculations coupled to photoluminescence measurements, we conclude that the I3 defect does not create states within the hex-Ge and hex-Si band gap. Therefore, the defect is not detrimental to the optoelectronic properties of the hex-SiGe materials family. Finally, highlighting the properties of this defect can be of great interest to the community of hex-III-Ns, where this defect is also present.

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Unveiling Planar Defects in Hexagonal Group IV Materials

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