Unified physical DC model of staggered amorphous InGaZnO transistors

M. Ghittorelli, F. Torricelli, C. Garripoli, J.L. van der Steen, G.H. Gelinck, E. Cantatore, L. Colalongo, Z.M. Kovács-Vajna

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Samenvatting

In this paper, we propose a unified physical model of InGaZnO [amorphous indium-gallium-zinc-oxide (a-IGZO)] thin-film transistors (TFTs) accounting for both charge injection at the contact and charge transport within the channel. We extract the current-voltage characteristics of the injecting contact from the measurements of a-IGZO TFTs fabricated on plastic foil. We show that the charge injection depends on both the drain and the gate voltages. We model the charge injection in staggered a-IGZO TFTs basing on the thermionic emission-diffusion theory including the charge carrier-dependent electron velocity due to the trap states in the subgap of the a-IGZO semiconductor. Combining the charge injection model with a charge transport model, we accurately and consistently describe the measurements of staggered a-IGZO TFTs with channel-length scaling from 200 μ m to 15 μ m. The proposed unified model is implemented in a circuit simulator and used to design unipolar inverters. The good agreement between simulations and measurements of the inverters further confirms the effectiveness of the proposed approach.

Originele taal-2Engels
Pagina's (van-tot)1076 - 1082
TijdschriftIEEE Transactions on Electron Devices
Volume64
Nummer van het tijdschrift3
DOI's
StatusGepubliceerd - mrt 2017

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Ghittorelli, M., Torricelli, F., Garripoli, C., van der Steen, J. L., Gelinck, G. H., Cantatore, E., ... Kovács-Vajna, Z. M. (2017). Unified physical DC model of staggered amorphous InGaZnO transistors. IEEE Transactions on Electron Devices, 64(3), 1076 - 1082 . https://doi.org/10.1109/TED.2016.2646369