Ultra-low surface recombination for deeply etched III-V semiconductor nano-cavity lasers

A. Higuera-Rodriguez, B. Romeira, S. Birindelli, L. Black, B. Smalbrugge, W. M.M. Kessels, M. K. Smit, A. Fiore

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

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We investigated the passivation of III-V semiconductor nanostructures using wet-chemical ammonium sulfide treatment and SiOx encapsulation. We achieved an ultra-low surface recombination velocity value of ~530 cm/s enabling the future development of high-performance room-temperature nanolasers.

Originele taal-2Engels
TitelIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2016
UitgeverijOptical Society of America (OSA)
Aantal pagina's3
ISBN van geprinte versie9781943580149
StatusGepubliceerd - 2016
EvenementIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2016 - Vancouver, Canada
Duur: 18 jul 201620 jul 2016

Congres

CongresIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2016
LandCanada
StadVancouver
Periode18/07/1620/07/16

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