Tunneling spectroscopy at nanometer scale in MBE-grown (Al)GaAs multilayers

O. Albrektsen, P.M. Koenraad, H.W.M. Salemink

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

2 Citaten (Scopus)

Originele taal-2	Engels
Titel	Physical concepts of materials for novel optoelectronic device applications I (1990)
Uitgeverij	SPIE
Pagina's	338-342
DOI's	https://doi.org/10.1117/12.24365
Status	Gepubliceerd - 1991

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title = "Tunneling spectroscopy at nanometer scale in MBE-grown (Al)GaAs multilayers",

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Tunneling spectroscopy at nanometer scale in MBE-grown (Al)GaAs multilayers. / Albrektsen, O.; Koenraad, P.M.; Salemink, H.W.M.
Physical concepts of materials for novel optoelectronic device applications I (1990). SPIE, 1991. blz. 338-342 (Proceedings of SPIE; Vol. 1361).

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Tunneling spectroscopy at nanometer scale in MBE-grown (Al)GaAs multilayers

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AU - Salemink, H.W.M.

PY - 1991

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BT - Physical concepts of materials for novel optoelectronic device applications I (1990)

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