Trapping of electrons in metal oxide-polymer memory diodes in the initial stage of electroforming

B.F. Bory, S.C.J. Meskers, R.A.J. Janssen, H.L. Gomes, D.M. Leeuw, de

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Samenvatting

Metal oxide-polymer diodes require electroforming before they act as nonvolatile resistive switching memory diodes. Here we investigate the early stages of the electroforming process in Al/Al2O3/poly(spirofluorene)/Ba/Al diodes using quasistatic capacitance-voltage measurements. In the initial stage, electrons are injected into the polymer and then deeply trapped near the poly(spirofluorene)-Al2O3 interface. For bias voltages below 6 V, the number of trapped electrons is found to be CoxideV/q with Coxide as the geometrical capacitance of the oxide layer. This implies a density of traps for the electrons at the polymer-metal oxide interface larger than 3×1017 m-2.
Originele taal-2Engels
Artikelnummer222106
Pagina's (van-tot)222106-1/3
Aantal pagina's3
TijdschriftApplied Physics Letters
Volume97
Nummer van het tijdschrift22
DOI's
StatusGepubliceerd - 2010

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