Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe

Alain Dijkstra; Marvin van Tilburg; Elham Fadaly; V.T. van Lange; Marcel A. Verheijen; Jens Renè  Suckert; Claudia Rödl; Jürgen Furthmüller; Friedhelm Bechstedt; Silvana Botti; David Busse; Jonathan J. Finley; Erik P.A.M. Bakkers; Jos E.M. Haverkort

doi:10.1364/CLEO_AT.2020.JW2F.3

Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe

Alain Dijkstra
, Marvin van Tilburg
, Elham Fadaly
, V.T. van Lange
, Marcel A. Verheijen
, Jens Renè Suckert
, Claudia Rödl
, Jürgen Furthmüller
, Friedhelm Bechstedt
, Silvana Botti
, David Busse
, Jonathan J. Finley
, Erik P.A.M. Bakkers
, Jos E.M. Haverkort

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

Samenvatting

Hexagonal SiGe is a direct bandgap semiconductor due to zone folding. A Lasher-Stern-Würfel fit of the photoluminescence spectrum unambiguously confirms band-to-band recombination. The transition matrix elements are large since the translational symmetry is broken.

Originele taal-2	Engels
Titel	2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings
Uitgeverij	Institute of Electrical and Electronics Engineers
Aantal pagina's	2
ISBN van elektronische versie	978-1-943580-76-7
DOI's	https://doi.org/10.1364/CLEO_AT.2020.JW2F.3
Status	Gepubliceerd - 10 sep. 2020
Evenement	2020 Conference on Lasers and Electro-Optics, CLEO 2020 - San Jose, Verenigde Staten van Amerika Duur: 10 mei 2020 → 15 mei 2020

Congres

Congres	2020 Conference on Lasers and Electro-Optics, CLEO 2020
Land/Regio	Verenigde Staten van Amerika
Stad	San Jose
Periode	10/05/20 → 15/05/20

Bibliografische nota

Publisher Copyright:
© OSA 2020 © 2020 The Author(s).

Financiering

In conclusion, the band folding of the L-minimum towards the Γ-point turns the indirect bandgap of cubic SiGe into a direct semiconductor in the hexagonal crystal phase. Hex-SiGe is thus a silicon compatible semiconductor with optical properties comparable to InP. This project has received funding from the European Union’s Horizon 2020 research and innovation program under grant agreement No 735008 (SiLAS) and the Dutch Organization for Scientific Research (NWO).

Financiers	Financiernummer
European Union’s Horizon Europe research and innovation programme	735008
Nederlandse Organisatie voor Wetenschappelijk Onderzoek

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10.1364/CLEO_AT.2020.JW2F.3

https://ieeexplore.ieee.org/document/9193825

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Dijkstra, A., van Tilburg, M., Fadaly, E., van Lange, V. T., Verheijen, M. A., Suckert, J. R., Rödl, C., Furthmüller, J., Bechstedt, F., Botti, S., Busse, D., Finley, J. J., Bakkers, E. P. A. M., & Haverkort, J. E. M. (2020). Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe. In 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings Artikel JW2F.3 Institute of Electrical and Electronics Engineers. https://doi.org/10.1364/CLEO_AT.2020.JW2F.3

@inproceedings{01dfd7f2f90f4892a05974055f85bfcf,

title = "Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe",

abstract = "Hexagonal SiGe is a direct bandgap semiconductor due to zone folding. A Lasher-Stern-W{\"u}rfel fit of the photoluminescence spectrum unambiguously confirms band-to-band recombination. The transition matrix elements are large since the translational symmetry is broken.",

author = "Alain Dijkstra and \{van Tilburg\}, Marvin and Elham Fadaly and \{van Lange\}, V.T. and Verheijen, \{Marcel A.\} and Suckert, \{Jens Ren{\`e}\} and Claudia R{\"o}dl and J{\"u}rgen Furthm{\"u}ller and Friedhelm Bechstedt and Silvana Botti and David Busse and Finley, \{Jonathan J.\} and Bakkers, \{Erik P.A.M.\} and Haverkort, \{Jos E.M.\}",

note = "Publisher Copyright: {\textcopyright} OSA 2020 {\textcopyright} 2020 The Author(s).; 2020 Conference on Lasers and Electro-Optics, CLEO 2020 ; Conference date: 10-05-2020 Through 15-05-2020",

year = "2020",

month = sep,

day = "10",

doi = "10.1364/CLEO\_AT.2020.JW2F.3",

language = "English",

booktitle = "2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

}

Dijkstra, A, van Tilburg, M, Fadaly, E, van Lange, VT , Verheijen, MA, Suckert, JR, Rödl, C, Furthmüller, J, Bechstedt, F, Botti, S, Busse, D, Finley, JJ, Bakkers, EPAM & Haverkort, JEM 2020, Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe. in 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings., JW2F.3, Institute of Electrical and Electronics Engineers, 2020 Conference on Lasers and Electro-Optics, CLEO 2020, San Jose, California, Verenigde Staten van Amerika, 10/05/20. https://doi.org/10.1364/CLEO_AT.2020.JW2F.3

Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe. / Dijkstra, Alain; van Tilburg, Marvin; Fadaly, Elham et al.
2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings. Institute of Electrical and Electronics Engineers, 2020. JW2F.3.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe

AU - Dijkstra, Alain

AU - van Tilburg, Marvin

AU - Fadaly, Elham

AU - van Lange, V.T.

AU - Verheijen, Marcel A.

AU - Suckert, Jens Renè

AU - Rödl, Claudia

AU - Furthmüller, Jürgen

AU - Bechstedt, Friedhelm

AU - Botti, Silvana

AU - Busse, David

AU - Finley, Jonathan J.

AU - Bakkers, Erik P.A.M.

AU - Haverkort, Jos E.M.

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N2 - Hexagonal SiGe is a direct bandgap semiconductor due to zone folding. A Lasher-Stern-Würfel fit of the photoluminescence spectrum unambiguously confirms band-to-band recombination. The transition matrix elements are large since the translational symmetry is broken.

AB - Hexagonal SiGe is a direct bandgap semiconductor due to zone folding. A Lasher-Stern-Würfel fit of the photoluminescence spectrum unambiguously confirms band-to-band recombination. The transition matrix elements are large since the translational symmetry is broken.

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DO - 10.1364/CLEO_AT.2020.JW2F.3

M3 - Conference contribution

AN - SCOPUS:85095112032

BT - 2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings

PB - Institute of Electrical and Electronics Engineers

T2 - 2020 Conference on Lasers and Electro-Optics, CLEO 2020

Y2 - 10 May 2020 through 15 May 2020

ER -

Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe

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