Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe

Alain Dijkstra, Marvin van Tilburg, Elham Fadaly, V.T. van Lange, Marcel A. Verheijen, Jens Renè Suckert, Claudia Rödl, Jürgen Furthmüller, Friedhelm Bechstedt, Silvana Botti, David Busse, Jonathan J. Finley, Erik P.A.M. Bakkers, Jos E.M. Haverkort

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

Hexagonal SiGe is a direct bandgap semiconductor due to zone folding. A Lasher-Stern-Würfel fit of the photoluminescence spectrum unambiguously confirms band-to-band recombination. The transition matrix elements are large since the translational symmetry is broken.

Originele taal-2Engels
Titel2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings
UitgeverijInstitute of Electrical and Electronics Engineers
Aantal pagina's2
ISBN van elektronische versie978-1-943580-76-7
DOI's
StatusGepubliceerd - 10 sep. 2020
Evenement2020 Conference on Lasers and Electro-Optics, CLEO 2020 - San Jose, Verenigde Staten van Amerika
Duur: 10 mei 202015 mei 2020

Congres

Congres2020 Conference on Lasers and Electro-Optics, CLEO 2020
Land/RegioVerenigde Staten van Amerika
StadSan Jose
Periode10/05/2015/05/20

Bibliografische nota

Publisher Copyright:
© OSA 2020 © 2020 The Author(s).

Financiering

In conclusion, the band folding of the L-minimum towards the Γ-point turns the indirect bandgap of cubic SiGe into a direct semiconductor in the hexagonal crystal phase. Hex-SiGe is thus a silicon compatible semiconductor with optical properties comparable to InP. This project has received funding from the European Union’s Horizon 2020 research and innovation program under grant agreement No 735008 (SiLAS) and the Dutch Organization for Scientific Research (NWO).

FinanciersFinanciernummer
Dutch Organization for Scientific Research
European Union’s Horizon Europe research and innovation programme735008
SiLAS
Nederlandse Organisatie voor Wetenschappelijk Onderzoek

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