Towards vertical III-V nanowire devices

M.T. Borgström; W.G.G. Immink; B. Ketelaars; M.A. Verheijen; R.E. Algra; E.P.A.M. Bakkers

doi:10.1109/IWPSD.2007.4472513

Towards vertical III-V nanowire devices

M.T. Borgström, W.G.G. Immink, B. Ketelaars, M.A. Verheijen, R.E. Algra, E.P.A.M. Bakkers

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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Investigation and understanding of growth parameters determining nanowire growth rates is necessary. For vertical architecture design relying on closely-spaced nanowire-based devices, absolute control of growth rates and wire (device) dimensions is required. Heterostructured nanowires where the segment dimensions critically determine quantization effects and thus the (opto) electronic properties of the wires were synthesized.

Originele taal-2	Engels
Titel	Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices (IWPSD), Mumbai, India, 16-20 December 2007
Pagina's	343-
DOI's	https://doi.org/10.1109/IWPSD.2007.4472513
Status	Gepubliceerd - 2007

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10.1109/IWPSD.2007.4472513

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@inproceedings{3f7f71899fec45a48e86b8d4e6f29dea,

title = "Towards vertical III-V nanowire devices",

abstract = "Investigation and understanding of growth parameters determining nanowire growth rates is necessary. For vertical architecture design relying on closely-spaced nanowire-based devices, absolute control of growth rates and wire (device) dimensions is required. Heterostructured nanowires where the segment dimensions critically determine quantization effects and thus the (opto) electronic properties of the wires were synthesized.",

author = "M.T. Borgstr{\"o}m and W.G.G. Immink and B. Ketelaars and M.A. Verheijen and R.E. Algra and E.P.A.M. Bakkers",

year = "2007",

doi = "10.1109/IWPSD.2007.4472513",

language = "English",

isbn = "978-1-4244-1728-5",

pages = "343--",

booktitle = "Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices (IWPSD), Mumbai, India, 16-20 December 2007",

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T1 - Towards vertical III-V nanowire devices

AU - Borgström, M.T.

AU - Immink, W.G.G.

AU - Ketelaars, B.

AU - Verheijen, M.A.

AU - Algra, R.E.

AU - Bakkers, E.P.A.M.

PY - 2007

Y1 - 2007

N2 - Investigation and understanding of growth parameters determining nanowire growth rates is necessary. For vertical architecture design relying on closely-spaced nanowire-based devices, absolute control of growth rates and wire (device) dimensions is required. Heterostructured nanowires where the segment dimensions critically determine quantization effects and thus the (opto) electronic properties of the wires were synthesized.

AB - Investigation and understanding of growth parameters determining nanowire growth rates is necessary. For vertical architecture design relying on closely-spaced nanowire-based devices, absolute control of growth rates and wire (device) dimensions is required. Heterostructured nanowires where the segment dimensions critically determine quantization effects and thus the (opto) electronic properties of the wires were synthesized.

U2 - 10.1109/IWPSD.2007.4472513

DO - 10.1109/IWPSD.2007.4472513

M3 - Conference contribution

SN - 978-1-4244-1728-5

SP - 343-

BT - Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices (IWPSD), Mumbai, India, 16-20 December 2007

ER -

Towards vertical III-V nanowire devices

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