Towards ultimate limit InP nanowire solar cells

E.A. Bochicchio, I. Kolpakov, K. Korzun, P.A.L.M. Koolen, B. van Gorkom, W.J.H. Berghuis, R. Veldhoven, J.E.M. Haverkort

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

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Our previously reported 17.8 % efficiency InP nanowire solar cell1 showed a short-circuit current Isc of 29.3 mA/cm2, which is not far from the theoretical maximum Isc = 34.6 mA/cm2, but the loss in the open circuit voltage with respect to the radiative limit still amounted to 272 mV. To avoid this loss and reach the radiative limit we have to increase both the internal radiative efficiency ηPlint and the photon escape probability Pesc towards unity, as shown by the last term in Eq. 1. 'Equation Presented' We report top-down etched InP nanowires intended to both optimize the amount of light outcoupling as well as the directionality of the emitted light. The photon entropy loss is governed by the ln ϵin/ϵout term, which is responsible for a 300 mV loss in the open circuit voltage. To circumvent this loss, we need to redirect all the emitted photoluminescence from the cell back to the sun (ϵin = ϵout), For this purpose, we have fabricated PMMA microlenses by using a reflow process, which can be precisely positioned with respect to the InP nanowires.

Originele taal-2Engels
TitelPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices XI
RedacteurenAlexandre Freundlich, Stephane Collin, Karin Hinzer
Aantal pagina's4
ISBN van elektronische versie9781510648630
StatusGepubliceerd - 2022
EvenementSPIE OPTO 2022 - Online/Virtual, San Francisco, Verenigde Staten van Amerika
Duur: 22 jan. 200228 feb. 2002

Publicatie series

NaamProceedings of SPIE
ISSN van geprinte versie0277-786X
ISSN van elektronische versie1996-756X


CongresSPIE OPTO 2022
Land/RegioVerenigde Staten van Amerika
StadSan Francisco


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