Towards all-electrical spin injection and detection in GaAs

J.J.H.M. Schoonus, O. Kurnosikov, H.J.M. Swagten, B. Koopmans, E.J. Geluk, F. Karouta, W. Roy, van, G. Borghs

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

2 Citaties (Scopus)

Uittreksel

We discuss our approach to realizing all-electrical spin injection and detection in GaAs via ferromagnetic metals and oxide tunnel barriers. A critical requirement is suppression of the formed Schottky barrier, which causes conductivity mismatching and prevents detection in reverse bias. However, initial I-V measurements of engineered GaAs/AlOx/CoFe tunnel contacts still show too high resistance area products in comparison to the semiconductor conductance, due to a large Schottky barrier contribution. To this end, optimized doping levels of the tunnel contacts and semiconductor spin transport region are calculated. Secondly, control over the magnetic properties of injector and detector electrode is established by designing both electrodes to have different switching fields, due to different widths.
Originele taal-2Engels
TitelProceedings of the 4th international conference on physics and applications of spin related phenomena in semiconductors (PASPS-IV), 15-18 august 2006, Sendai, Japan
Plaats van productieSendai, Japan
StatusGepubliceerd - 2006
Evenement4th International Conference on Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-IV), August 15-18, 2006, Sendai, Japan - Sendai, Japan
Duur: 15 aug 200618 aug 2006

Congres

Congres4th International Conference on Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-IV), August 15-18, 2006, Sendai, Japan
Verkorte titelPASPS-IV
LandJapan
StadSendai
Periode15/08/0618/08/06
Ander4th Intern. Conf. on Physics and Applications of Spin Related Phenomena in Semiconductors

Vingerafdruk

tunnels
injection
electrodes
high resistance
injectors
retarding
magnetic properties
conductivity
requirements
oxides
causes
detectors
products
metals

Citeer dit

Schoonus, J. J. H. M., Kurnosikov, O., Swagten, H. J. M., Koopmans, B., Geluk, E. J., Karouta, F., ... Borghs, G. (2006). Towards all-electrical spin injection and detection in GaAs. In Proceedings of the 4th international conference on physics and applications of spin related phenomena in semiconductors (PASPS-IV), 15-18 august 2006, Sendai, Japan Sendai, Japan.
Schoonus, J.J.H.M. ; Kurnosikov, O. ; Swagten, H.J.M. ; Koopmans, B. ; Geluk, E.J. ; Karouta, F. ; Roy, van, W. ; Borghs, G. / Towards all-electrical spin injection and detection in GaAs. Proceedings of the 4th international conference on physics and applications of spin related phenomena in semiconductors (PASPS-IV), 15-18 august 2006, Sendai, Japan. Sendai, Japan, 2006.
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title = "Towards all-electrical spin injection and detection in GaAs",
abstract = "We discuss our approach to realizing all-electrical spin injection and detection in GaAs via ferromagnetic metals and oxide tunnel barriers. A critical requirement is suppression of the formed Schottky barrier, which causes conductivity mismatching and prevents detection in reverse bias. However, initial I-V measurements of engineered GaAs/AlOx/CoFe tunnel contacts still show too high resistance area products in comparison to the semiconductor conductance, due to a large Schottky barrier contribution. To this end, optimized doping levels of the tunnel contacts and semiconductor spin transport region are calculated. Secondly, control over the magnetic properties of injector and detector electrode is established by designing both electrodes to have different switching fields, due to different widths.",
author = "J.J.H.M. Schoonus and O. Kurnosikov and H.J.M. Swagten and B. Koopmans and E.J. Geluk and F. Karouta and {Roy, van}, W. and G. Borghs",
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Schoonus, JJHM, Kurnosikov, O, Swagten, HJM, Koopmans, B, Geluk, EJ, Karouta, F, Roy, van, W & Borghs, G 2006, Towards all-electrical spin injection and detection in GaAs. in Proceedings of the 4th international conference on physics and applications of spin related phenomena in semiconductors (PASPS-IV), 15-18 august 2006, Sendai, Japan. Sendai, Japan, Sendai, Japan, 15/08/06.

Towards all-electrical spin injection and detection in GaAs. / Schoonus, J.J.H.M.; Kurnosikov, O.; Swagten, H.J.M.; Koopmans, B.; Geluk, E.J.; Karouta, F.; Roy, van, W.; Borghs, G.

Proceedings of the 4th international conference on physics and applications of spin related phenomena in semiconductors (PASPS-IV), 15-18 august 2006, Sendai, Japan. Sendai, Japan, 2006.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

TY - GEN

T1 - Towards all-electrical spin injection and detection in GaAs

AU - Schoonus, J.J.H.M.

AU - Kurnosikov, O.

AU - Swagten, H.J.M.

AU - Koopmans, B.

AU - Geluk, E.J.

AU - Karouta, F.

AU - Roy, van, W.

AU - Borghs, G.

PY - 2006

Y1 - 2006

N2 - We discuss our approach to realizing all-electrical spin injection and detection in GaAs via ferromagnetic metals and oxide tunnel barriers. A critical requirement is suppression of the formed Schottky barrier, which causes conductivity mismatching and prevents detection in reverse bias. However, initial I-V measurements of engineered GaAs/AlOx/CoFe tunnel contacts still show too high resistance area products in comparison to the semiconductor conductance, due to a large Schottky barrier contribution. To this end, optimized doping levels of the tunnel contacts and semiconductor spin transport region are calculated. Secondly, control over the magnetic properties of injector and detector electrode is established by designing both electrodes to have different switching fields, due to different widths.

AB - We discuss our approach to realizing all-electrical spin injection and detection in GaAs via ferromagnetic metals and oxide tunnel barriers. A critical requirement is suppression of the formed Schottky barrier, which causes conductivity mismatching and prevents detection in reverse bias. However, initial I-V measurements of engineered GaAs/AlOx/CoFe tunnel contacts still show too high resistance area products in comparison to the semiconductor conductance, due to a large Schottky barrier contribution. To this end, optimized doping levels of the tunnel contacts and semiconductor spin transport region are calculated. Secondly, control over the magnetic properties of injector and detector electrode is established by designing both electrodes to have different switching fields, due to different widths.

M3 - Conference contribution

BT - Proceedings of the 4th international conference on physics and applications of spin related phenomena in semiconductors (PASPS-IV), 15-18 august 2006, Sendai, Japan

CY - Sendai, Japan

ER -

Schoonus JJHM, Kurnosikov O, Swagten HJM, Koopmans B, Geluk EJ, Karouta F et al. Towards all-electrical spin injection and detection in GaAs. In Proceedings of the 4th international conference on physics and applications of spin related phenomena in semiconductors (PASPS-IV), 15-18 august 2006, Sendai, Japan. Sendai, Japan. 2006