Towards all-electrical spin injection and detection in GaAs

J.J.H.M. Schoonus, O. Kurnosikov, H.J.M. Swagten, B. Koopmans, E.J. Geluk, F. Karouta, W. Roy, van, G. Borghs

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2 Citaties (Scopus)

Uittreksel

We discuss our approach to realizing all-electrical spin injection and detection in GaAs via ferromagnetic metals and oxide tunnel barriers. A critical requirement is suppression of the formed Schottky barrier, which causes conductivity mismatching and prevents detection in reverse bias. However, initial I-V measurements of engineered GaAs/AlOx /CoFe tunnel contacts still show too high resistance area products in comparison to the semiconductor conductance, due to a large Schottky barrier contribution. To this end, optimized doping levels of the tunnel contacts and semiconductor spin transport region are calculated. Secondly, control over the magnetic properties of injector and detector electrode is established by designing both electrodes to have different switching fields, due to different widths.
Originele taal-2Engels
Pagina's (van-tot)4176-4179
Aantal pagina's4
TijdschriftPhysica Status Solidi C: Conferences
Volume3
Nummer van het tijdschrift12
DOI's
StatusGepubliceerd - 2006

Vingerafdruk

tunnels
injection
electrodes
high resistance
injectors
retarding
magnetic properties
conductivity
requirements
oxides
causes
detectors
products
metals

Citeer dit

Schoonus, J.J.H.M. ; Kurnosikov, O. ; Swagten, H.J.M. ; Koopmans, B. ; Geluk, E.J. ; Karouta, F. ; Roy, van, W. ; Borghs, G. / Towards all-electrical spin injection and detection in GaAs. In: Physica Status Solidi C: Conferences. 2006 ; Vol. 3, Nr. 12. blz. 4176-4179.
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abstract = "We discuss our approach to realizing all-electrical spin injection and detection in GaAs via ferromagnetic metals and oxide tunnel barriers. A critical requirement is suppression of the formed Schottky barrier, which causes conductivity mismatching and prevents detection in reverse bias. However, initial I-V measurements of engineered GaAs/AlOx /CoFe tunnel contacts still show too high resistance area products in comparison to the semiconductor conductance, due to a large Schottky barrier contribution. To this end, optimized doping levels of the tunnel contacts and semiconductor spin transport region are calculated. Secondly, control over the magnetic properties of injector and detector electrode is established by designing both electrodes to have different switching fields, due to different widths.",
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Towards all-electrical spin injection and detection in GaAs. / Schoonus, J.J.H.M.; Kurnosikov, O.; Swagten, H.J.M.; Koopmans, B.; Geluk, E.J.; Karouta, F.; Roy, van, W.; Borghs, G.

In: Physica Status Solidi C: Conferences, Vol. 3, Nr. 12, 2006, blz. 4176-4179.

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

TY - JOUR

T1 - Towards all-electrical spin injection and detection in GaAs

AU - Schoonus, J.J.H.M.

AU - Kurnosikov, O.

AU - Swagten, H.J.M.

AU - Koopmans, B.

AU - Geluk, E.J.

AU - Karouta, F.

AU - Roy, van, W.

AU - Borghs, G.

PY - 2006

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N2 - We discuss our approach to realizing all-electrical spin injection and detection in GaAs via ferromagnetic metals and oxide tunnel barriers. A critical requirement is suppression of the formed Schottky barrier, which causes conductivity mismatching and prevents detection in reverse bias. However, initial I-V measurements of engineered GaAs/AlOx /CoFe tunnel contacts still show too high resistance area products in comparison to the semiconductor conductance, due to a large Schottky barrier contribution. To this end, optimized doping levels of the tunnel contacts and semiconductor spin transport region are calculated. Secondly, control over the magnetic properties of injector and detector electrode is established by designing both electrodes to have different switching fields, due to different widths.

AB - We discuss our approach to realizing all-electrical spin injection and detection in GaAs via ferromagnetic metals and oxide tunnel barriers. A critical requirement is suppression of the formed Schottky barrier, which causes conductivity mismatching and prevents detection in reverse bias. However, initial I-V measurements of engineered GaAs/AlOx /CoFe tunnel contacts still show too high resistance area products in comparison to the semiconductor conductance, due to a large Schottky barrier contribution. To this end, optimized doping levels of the tunnel contacts and semiconductor spin transport region are calculated. Secondly, control over the magnetic properties of injector and detector electrode is established by designing both electrodes to have different switching fields, due to different widths.

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DO - 10.1002/pssc.200672818

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EP - 4179

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

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