Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography

M.A. Verheijen, R.E. Algra, M.T. Borgström, W.G.G. Immink, E. Sourty, W.J.P. Enckevort, van, E. Vlieg, E.P.A.M. Bakkers

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

81 Citaties (Scopus)

Uittreksel

We have investigated the morphology of heterostructured GaP-GaAs nanowires grown by metal-organic vapor-phase epitaxy as a function of growth temperature and Will precursor ratio. The study of heterostructured nanowires with transmission electron microscopy tomography allowed the three-dimensional morphology to be resolved, and discrimination between the effect of axial (core) and radial (shell) growth on the morphology. A temperature- and precursor-dependent structure diagram for the GaP nanowire core morphology and the evolution of the different types of side facets during GaAs and GaP shell growth were constituted.
TaalEngels
Pagina's3051-3055
TijdschriftNano Letters
Volume7
Nummer van het tijdschrift10
DOI's
StatusGepubliceerd - 2007

Vingerafdruk

Nanowires
Tomography
nanowires
tomography
Transmission electron microscopy
transmission electron microscopy
Vapor phase epitaxy
Growth temperature
vapor phase epitaxy
discrimination
flat surfaces
Metals
diagrams
temperature
gallium arsenide
metals
Temperature

Citeer dit

Verheijen, M. A., Algra, R. E., Borgström, M. T., Immink, W. G. G., Sourty, E., Enckevort, van, W. J. P., ... Bakkers, E. P. A. M. (2007). Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography. Nano Letters, 7(10), 3051-3055. DOI: 10.1021/nl071541q
Verheijen, M.A. ; Algra, R.E. ; Borgström, M.T. ; Immink, W.G.G. ; Sourty, E. ; Enckevort, van, W.J.P. ; Vlieg, E. ; Bakkers, E.P.A.M./ Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography. In: Nano Letters. 2007 ; Vol. 7, Nr. 10. blz. 3051-3055
@article{f537fbf22eae45ce9fecf55083b6a9f5,
title = "Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography",
abstract = "We have investigated the morphology of heterostructured GaP-GaAs nanowires grown by metal-organic vapor-phase epitaxy as a function of growth temperature and Will precursor ratio. The study of heterostructured nanowires with transmission electron microscopy tomography allowed the three-dimensional morphology to be resolved, and discrimination between the effect of axial (core) and radial (shell) growth on the morphology. A temperature- and precursor-dependent structure diagram for the GaP nanowire core morphology and the evolution of the different types of side facets during GaAs and GaP shell growth were constituted.",
author = "M.A. Verheijen and R.E. Algra and M.T. Borgstr{\"o}m and W.G.G. Immink and E. Sourty and {Enckevort, van}, W.J.P. and E. Vlieg and E.P.A.M. Bakkers",
year = "2007",
doi = "10.1021/nl071541q",
language = "English",
volume = "7",
pages = "3051--3055",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "10",

}

Verheijen, MA, Algra, RE, Borgström, MT, Immink, WGG, Sourty, E, Enckevort, van, WJP, Vlieg, E & Bakkers, EPAM 2007, 'Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography' Nano Letters, vol. 7, nr. 10, blz. 3051-3055. DOI: 10.1021/nl071541q

Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography. / Verheijen, M.A.; Algra, R.E.; Borgström, M.T.; Immink, W.G.G.; Sourty, E.; Enckevort, van, W.J.P.; Vlieg, E.; Bakkers, E.P.A.M.

In: Nano Letters, Vol. 7, Nr. 10, 2007, blz. 3051-3055.

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

TY - JOUR

T1 - Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography

AU - Verheijen,M.A.

AU - Algra,R.E.

AU - Borgström,M.T.

AU - Immink,W.G.G.

AU - Sourty,E.

AU - Enckevort, van,W.J.P.

AU - Vlieg,E.

AU - Bakkers,E.P.A.M.

PY - 2007

Y1 - 2007

N2 - We have investigated the morphology of heterostructured GaP-GaAs nanowires grown by metal-organic vapor-phase epitaxy as a function of growth temperature and Will precursor ratio. The study of heterostructured nanowires with transmission electron microscopy tomography allowed the three-dimensional morphology to be resolved, and discrimination between the effect of axial (core) and radial (shell) growth on the morphology. A temperature- and precursor-dependent structure diagram for the GaP nanowire core morphology and the evolution of the different types of side facets during GaAs and GaP shell growth were constituted.

AB - We have investigated the morphology of heterostructured GaP-GaAs nanowires grown by metal-organic vapor-phase epitaxy as a function of growth temperature and Will precursor ratio. The study of heterostructured nanowires with transmission electron microscopy tomography allowed the three-dimensional morphology to be resolved, and discrimination between the effect of axial (core) and radial (shell) growth on the morphology. A temperature- and precursor-dependent structure diagram for the GaP nanowire core morphology and the evolution of the different types of side facets during GaAs and GaP shell growth were constituted.

U2 - 10.1021/nl071541q

DO - 10.1021/nl071541q

M3 - Article

VL - 7

SP - 3051

EP - 3055

JO - Nano Letters

T2 - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 10

ER -

Verheijen MA, Algra RE, Borgström MT, Immink WGG, Sourty E, Enckevort, van WJP et al. Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography. Nano Letters. 2007;7(10):3051-3055. Beschikbaar vanaf, DOI: 10.1021/nl071541q