Samenvatting
Time-resolved terahertz (THz) spectroscopy has been shown as a powerful technique to non-invasively determine the charge carrier properties in photoexcited semiconductors. However, the long wavelengths of terahertz radiation reduce the applicability of this technique to large samples. Using THz near-field microscopy, we show THz measurements of the lifetime of 2D single exfoliated microcrystals of transition metal dichalcogenides (WS2). The increased spatial resolution of THz near-field microscopy allows spatial mapping of the evolution of the carrier lifetime, revealing Auger assisted surface defect recombination as the dominant recombination channel. THz near-field microscopy allows for the non-invasive and high-resolution investigation of material properties of 2D semiconductors relevant for nanoelectronic and optoelectronic applications.
| Originele taal-2 | Engels |
|---|---|
| Pagina's (van-tot) | 708-711 |
| Aantal pagina's | 4 |
| Tijdschrift | Optics Letters |
| Volume | 48 |
| Nummer van het tijdschrift | 3 |
| DOI's | |
| Status | Gepubliceerd - 1 feb. 2023 |
Bibliografische nota
Funding Information:Nederlandse Organisatie voor Wetenschappelijk Onderzoek (Vici 680-47-628). The authors thank Rasmus Godiksen for providing the WS2 sample and performing photoluminescence measurements and Mohamed S. Abdelkhalik for performing the atomic force microscopy measurements.
Publisher Copyright:
© 2023 Optica Publishing Group.
Financiering
Nederlandse Organisatie voor Wetenschappelijk Onderzoek (Vici 680-47-628). The authors thank Rasmus Godiksen for providing the WS2 sample and performing photoluminescence measurements and Mohamed S. Abdelkhalik for performing the atomic force microscopy measurements.