Thermal Stress Reduction of Power MOSFET in Electric Drive Application with Dynamic Gate Driving Strategy

Lie Wang; Bas J.D. Vermulst; Jorge L.  Duarte; Henk Huisman

doi:10.1109/APEC42165.2021.9487385

Thermal Stress Reduction of Power MOSFET in Electric Drive Application with Dynamic Gate Driving Strategy

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

6 Citaten (Scopus)

412 Downloads (Pure)

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While operating an electric drive under different load conditions, power semiconductor devices experience thermal
stress which compromises lifetime. In this paper, a model based gate voltage control is proposed to reduce the
thermal stress by shaping the profile of conduction losses. Thermal stability criterions are introduced, which
confine the gate voltage range to prevent current focalization and local heat up. This method is verified by using a
custom proof-of-concept gate driver that supplies an adjustable three-level gate voltage. A three-phase electric
drive is prototyped, on which power cycling tests are conducted and the results confirm the thermal control
method.

Originele taal-2	Engels
Titel	2021 IEEE Applied Power Electronics Conference and Exposition (APEC)
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	720-727
Aantal pagina's	8
ISBN van elektronische versie	978-1-7281-8949-9
DOI's	https://doi.org/10.1109/APEC42165.2021.9487385
Status	Gepubliceerd - 21 jul. 2021
Evenement	36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021 - Phoenix, Verenigde Staten van Amerika Duur: 14 jun. 2021 → 17 jun. 2021 Congresnummer: 36

Congres

Congres	36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021
Verkorte titel	APEC 2021
Land/Regio	Verenigde Staten van Amerika
Stad	Phoenix
Periode	14/06/21 → 17/06/21

Financiering

Financiers	Financiernummer
European Union’s Horizon Europe research and innovation programme	783174
Electronic Components and Systems for European Leadership

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10.1109/APEC42165.2021.9487385

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@inproceedings{e0b9d6eda3b541bdaeee0625b86a027a,

title = "Thermal Stress Reduction of Power MOSFET in Electric Drive Application with Dynamic Gate Driving Strategy",

abstract = "While operating an electric drive under different load conditions, power semiconductor devices experience thermal stress which compromises lifetime. In this paper, a model based gate voltage control is proposed to reduce the thermal stress by shaping the profile of conduction losses. Thermal stability criterions are introduced, which confine the gate voltage range to prevent current focalization and local heat up. This method is verified by using a custom proof-of-concept gate driver that supplies an adjustable three-level gate voltage. A three-phase electric drive is prototyped, on which power cycling tests are conducted and the results confirm the thermal control method.",

keywords = "Electric drive, Gate driver, Lifetime, Modelling, Power MOSFET",

author = "Lie Wang and Vermulst, \{Bas J.D.\} and Duarte, \{Jorge L.\} and Henk Huisman",

year = "2021",

month = jul,

day = "21",

doi = "10.1109/APEC42165.2021.9487385",

language = "English",

pages = "720--727",

booktitle = "2021 IEEE Applied Power Electronics Conference and Exposition (APEC)",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021, APEC 2021 ; Conference date: 14-06-2021 Through 17-06-2021",

}

Wang, L, Vermulst, BJD , Duarte, JL & Huisman, H 2021, Thermal Stress Reduction of Power MOSFET in Electric Drive Application with Dynamic Gate Driving Strategy. in 2021 IEEE Applied Power Electronics Conference and Exposition (APEC). Institute of Electrical and Electronics Engineers, blz. 720-727, 36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021, Phoenix, Arizona, Verenigde Staten van Amerika, 14/06/21. https://doi.org/10.1109/APEC42165.2021.9487385

Thermal Stress Reduction of Power MOSFET in Electric Drive Application with Dynamic Gate Driving Strategy. / Wang, Lie; Vermulst, Bas J.D.; Duarte, Jorge L. et al.
2021 IEEE Applied Power Electronics Conference and Exposition (APEC). Institute of Electrical and Electronics Engineers, 2021. blz. 720-727.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Thermal Stress Reduction of Power MOSFET in Electric Drive Application with Dynamic Gate Driving Strategy

AU - Wang, Lie

AU - Vermulst, Bas J.D.

AU - Duarte, Jorge L.

AU - Huisman, Henk

N1 - Conference code: 36

PY - 2021/7/21

Y1 - 2021/7/21

N2 - While operating an electric drive under different load conditions, power semiconductor devices experience thermal stress which compromises lifetime. In this paper, a model based gate voltage control is proposed to reduce the thermal stress by shaping the profile of conduction losses. Thermal stability criterions are introduced, which confine the gate voltage range to prevent current focalization and local heat up. This method is verified by using a custom proof-of-concept gate driver that supplies an adjustable three-level gate voltage. A three-phase electric drive is prototyped, on which power cycling tests are conducted and the results confirm the thermal control method.

AB - While operating an electric drive under different load conditions, power semiconductor devices experience thermal stress which compromises lifetime. In this paper, a model based gate voltage control is proposed to reduce the thermal stress by shaping the profile of conduction losses. Thermal stability criterions are introduced, which confine the gate voltage range to prevent current focalization and local heat up. This method is verified by using a custom proof-of-concept gate driver that supplies an adjustable three-level gate voltage. A three-phase electric drive is prototyped, on which power cycling tests are conducted and the results confirm the thermal control method.

KW - Electric drive

KW - Gate driver

KW - Lifetime

KW - Modelling

KW - Power MOSFET

UR - https://www.scopus.com/pages/publications/85115693176

U2 - 10.1109/APEC42165.2021.9487385

DO - 10.1109/APEC42165.2021.9487385

M3 - Conference contribution

SP - 720

EP - 727

BT - 2021 IEEE Applied Power Electronics Conference and Exposition (APEC)

PB - Institute of Electrical and Electronics Engineers

T2 - 36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021

Y2 - 14 June 2021 through 17 June 2021

ER -

Thermal Stress Reduction of Power MOSFET in Electric Drive Application with Dynamic Gate Driving Strategy

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