Thermal Stress Reduction and Lifetime Improvement of Power Switches with Dynamic Gate Driving Strategy

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

The thermal stress and lifetime of semiconductor power switches are largely influenced by its current flow profile. Considerable thermal stress and reduced lifetime problems occur especially at low
frequency operation. In this paper, a dynamic gate driver that supplies adjustable voltage is proposed to mitigate thermal stress for lifetime improvement.
Originele taal-2Engels
TitelIEEE Young Researchers Symposium in Electrical Power Engineering (YRS 2018)
Plaats van productieBrussels
StatusGepubliceerd - 24 mei 2018
EvenementIEEE Young Researchers Symposium in Electrical Power Engineering (YRS 2018) - Bruxelles, België
Duur: 24 mei 201825 mei 2018
http://yrs2018.ulb.be/

Congres

CongresIEEE Young Researchers Symposium in Electrical Power Engineering (YRS 2018)
Verkorte titelYRS2018
Land/RegioBelgië
StadBruxelles
Periode24/05/1825/05/18
Internet adres

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