Samenvatting
The thermal stress and lifetime of semiconductor power switches are largely determined by thermal cycling. Considerable thermal stress and reduced lifetime problems occur especially at low frequency operation. In this paper, an analytical model and the equivalent circuit model of power MOSFETs are derived to investigate their thermal behavior. After that, a dynamic gate driver that supplies an adjustable gate voltage is proposed to shape the power losses, thus mitigate thermal stress for lifetime improvement. Finally, the resulting semiconductor lifetime is estimated, which shows an improvement by a factor of two after applying the proposed strategy.
Originele taal-2 | Engels |
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Titel | 2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe |
Uitgeverij | Institute of Electrical and Electronics Engineers |
Aantal pagina's | 8 |
ISBN van elektronische versie | 9789075815313 |
DOI's | |
Status | Gepubliceerd - sep. 2019 |
Evenement | 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) - Via Magazzini del Cotone, Genova, Italië Duur: 3 sep. 2019 → 5 sep. 2019 Congresnummer: 21 http://epe-ecce-conferences.com/epe2019/ |
Congres
Congres | 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) |
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Verkorte titel | EPE 2019 ECCE |
Land/Regio | Italië |
Stad | Genova |
Periode | 3/09/19 → 5/09/19 |
Internet adres |