Thermal stress reduction and lifetime improvement of power switches with dynamic gate driving strategy

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Samenvatting

The thermal stress and lifetime of semiconductor power switches are largely determined by thermal cycling. Considerable thermal stress and reduced lifetime problems occur especially at low frequency operation. In this paper, an analytical model and the equivalent circuit model of power MOSFETs are derived to investigate their thermal behavior. After that, a dynamic gate driver that supplies an adjustable gate voltage is proposed to shape the power losses, thus mitigate thermal stress for lifetime improvement. Finally, the resulting semiconductor lifetime is estimated, which shows an improvement by a factor of two after applying the proposed strategy.

Originele taal-2Engels
Titel2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe
UitgeverijInstitute of Electrical and Electronics Engineers
Aantal pagina's8
ISBN van elektronische versie9789075815313
DOI's
StatusGepubliceerd - sep. 2019
Evenement2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) - Via Magazzini del Cotone, Genova, Italië
Duur: 3 sep. 20195 sep. 2019
Congresnummer: 21
http://epe-ecce-conferences.com/epe2019/

Congres

Congres2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)
Verkorte titelEPE 2019 ECCE
Land/RegioItalië
StadGenova
Periode3/09/195/09/19
Internet adres

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