Theoretical model for Dicke superradiance in a semiconductor laser device

X. Guo, K.A. Williams, V.F. Olle, A. Wonfor, R.V. Penty, I.H. White

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

4 Citaten (Scopus)
3 Downloads (Pure)


A theoretical model for Dicke superradiance (SR) in diode lasers is proposed using the travelling wave method with a spatially resolved absorber and spectrally resolved gain. The role of electrode configuration and optical bandwidth are compared and contrasted as a route to enhance femtosecond pulse power. While pulse duration can be significantly reduced through careful absorber length specification, stability is degraded. However an increased spectral gain bandwidth of up to 150 nm is predicted to allow pulsewidth reductions of down to 10 fs and over 500-W peak power without further degradation in pulse stability.
Originele taal-2Engels
Pagina's (van-tot)1817-1819
TijdschriftIEEE Photonics Technology Letters
Nummer van het tijdschrift23
StatusGepubliceerd - 2011

Vingerafdruk Duik in de onderzoeksthema's van 'Theoretical model for Dicke superradiance in a semiconductor laser device'. Samen vormen ze een unieke vingerafdruk.

Citeer dit