The role of preamorphization and activation for ultra shallow junction formation on strained Si layers grown on SiGe buffer

B.J. Pawlak, W. Vandervorst, R. Lindsay, I. De Wolf, F. Roozeboom, R. Delhougne, A. Benedetti, R. Loo, M. Caymax, K. Maex, N.E.B. Cowern

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

The role of amorphization during ultra shallow junction formation on strained Si layers grown on SiGe buffer was investigated. Two dopant activation technique such as temperature solid phase epitaxial regrowth (SPER) and high temperature conventional spike were used. 8nm strained silicon layers were epi-grown by chemical vapor deposition (CVD) on strain relaxed Si 0.8Ge0.2 layers. It was observed that implantation and amorphization removes efficiently strain in the extension.

Originele taal-2Engels
TitelHigh-Mobility Group-IV Materials and Devices
Plaats van productieWarrendale
UitgeverijMaterials Research Society
Pagina's281-286
Aantal pagina's6
DOI's
StatusGepubliceerd - 1 dec. 2004
Extern gepubliceerdJa
EvenementHigh-Mobility Group-IV Materials and Devices - San Francisco, CA, Verenigde Staten van Amerika
Duur: 13 apr. 200415 apr. 2004

Publicatie series

NaamMaterials Research Society Symposium Proceedings
Volume809
ISSN van geprinte versie0272-9172

Congres

CongresHigh-Mobility Group-IV Materials and Devices
Land/RegioVerenigde Staten van Amerika
StadSan Francisco, CA
Periode13/04/0415/04/04

Vingerafdruk

Duik in de onderzoeksthema's van 'The role of preamorphization and activation for ultra shallow junction formation on strained Si layers grown on SiGe buffer'. Samen vormen ze een unieke vingerafdruk.

Citeer dit