TY - JOUR
T1 - The role of ion-bulk interactions during high rate deposition of microcrystalline silicon by means of the multi-hole-cathode VHF plasma
AU - Smets, A.H.M.
AU - Kondo, M.
PY - 2006
Y1 - 2006
N2 - The high rate deposition of microcryst. silicon (micro c-Si:H) by means of the novel multi-hole-cathode very high frequency (MHC-VHF) plasma technique has been studied in the high-pressure depletion region (9.3 Torr). A distinct relationship between vacancy incorporation, the cryst. vol. fraction and a qual. measurement of the energy of the ions bombarding the substrate has been found. The obsd. relation is explained with the help of an ion-phase-diagram: we claim that the most energetic ions, contg. at least one silicon atom, are responsible for the local amorphization of the micro c-Si:H films via the ion induced Si bulk displacement mechanism. [on SciFinder (R)]
AB - The high rate deposition of microcryst. silicon (micro c-Si:H) by means of the novel multi-hole-cathode very high frequency (MHC-VHF) plasma technique has been studied in the high-pressure depletion region (9.3 Torr). A distinct relationship between vacancy incorporation, the cryst. vol. fraction and a qual. measurement of the energy of the ions bombarding the substrate has been found. The obsd. relation is explained with the help of an ion-phase-diagram: we claim that the most energetic ions, contg. at least one silicon atom, are responsible for the local amorphization of the micro c-Si:H films via the ion induced Si bulk displacement mechanism. [on SciFinder (R)]
U2 - 10.1016/j.jnoncrysol.2005.10.073
DO - 10.1016/j.jnoncrysol.2005.10.073
M3 - Article
VL - 352
SP - 937
EP - 940
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
SN - 0022-3093
IS - 9-20
ER -