The pn-Junction as an inductive design component in silicon IC processes

G.A.M. Hurkx; P.G.M. Baltus; J.A.M. de Boet; J.A.M. Geelen; J.J.E.M. Hageraats

doi:10.1109/BIPOL.1995.493880

The pn-Junction as an inductive design component in silicon IC processes

G.A.M. Hurkx
, P.G.M. Baltus
, J.A.M. de Boet
, J.A.M. Geelen
, J.J.E.M. Hageraats

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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pn-Junctions in IC processes are investigated for the use as an inductive design component. Measurements of inductance, quality factor and noise under avalanche breakdown conditions are compared to device simulations and the theory for IMPATT diodes. Inhomogeneous breakdown is also investigated.

Originele taal-2	Engels
Titel	Proceedings of Bipolar/Bicmos Circuits and Technology Meeting
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	125-128
Aantal pagina's	4
ISBN van geprinte versie	0-7803-2778-0
DOI's	https://doi.org/10.1109/BIPOL.1995.493880
Status	Gepubliceerd - 6 aug. 2020
Extern gepubliceerd	Ja
Evenement	1995 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Minneapolis, Verenigde Staten van Amerika Duur: 2 okt. 1995 → 3 okt. 1995

Congres

Congres	1995 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Land/Regio	Verenigde Staten van Amerika
Stad	Minneapolis
Periode	2/10/95 → 3/10/95

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10.1109/BIPOL.1995.493880

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title = "The pn-Junction as an inductive design component in silicon IC processes",

abstract = "pn-Junctions in IC processes are investigated for the use as an inductive design component. Measurements of inductance, quality factor and noise under avalanche breakdown conditions are compared to device simulations and the theory for IMPATT diodes. Inhomogeneous breakdown is also investigated.",

author = "G.A.M. Hurkx and P.G.M. Baltus and \{de Boet\}, J.A.M. and J.A.M. Geelen and J.J.E.M. Hageraats",

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pages = "125--128",

booktitle = "Proceedings of Bipolar/Bicmos Circuits and Technology Meeting",

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note = "1995 IEEE Bipolar/BiCMOS Circuits and Technology Meeting ; Conference date: 02-10-1995 Through 03-10-1995",

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Hurkx, GAM, Baltus, PGM, de Boet, JAM, Geelen, JAM & Hageraats, JJEM 2020, The pn-Junction as an inductive design component in silicon IC processes. in Proceedings of Bipolar/Bicmos Circuits and Technology Meeting., 493880, Institute of Electrical and Electronics Engineers, blz. 125-128, 1995 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Minneapolis, Minnesota, Verenigde Staten van Amerika, 2/10/95. https://doi.org/10.1109/BIPOL.1995.493880

The pn-Junction as an inductive design component in silicon IC processes. / Hurkx, G.A.M.; Baltus, P.G.M.; de Boet, J.A.M. et al.
Proceedings of Bipolar/Bicmos Circuits and Technology Meeting. Institute of Electrical and Electronics Engineers, 2020. blz. 125-128 493880.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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AU - Hurkx, G.A.M.

AU - Baltus, P.G.M.

AU - de Boet, J.A.M.

AU - Geelen, J.A.M.

AU - Hageraats, J.J.E.M.

PY - 2020/8/6

Y1 - 2020/8/6

N2 - pn-Junctions in IC processes are investigated for the use as an inductive design component. Measurements of inductance, quality factor and noise under avalanche breakdown conditions are compared to device simulations and the theory for IMPATT diodes. Inhomogeneous breakdown is also investigated.

AB - pn-Junctions in IC processes are investigated for the use as an inductive design component. Measurements of inductance, quality factor and noise under avalanche breakdown conditions are compared to device simulations and the theory for IMPATT diodes. Inhomogeneous breakdown is also investigated.

UR - https://www.scopus.com/pages/publications/0029528799

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DO - 10.1109/BIPOL.1995.493880

M3 - Conference contribution

SN - 0-7803-2778-0

SP - 125

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BT - Proceedings of Bipolar/Bicmos Circuits and Technology Meeting

PB - Institute of Electrical and Electronics Engineers

T2 - 1995 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Y2 - 2 October 1995 through 3 October 1995

ER -

The pn-Junction as an inductive design component in silicon IC processes

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