TY - JOUR
T1 - The need for multi-scale approaches in Cu/low-k reliability issues
AU - Yuan, C.A.
AU - Sluis, van der, O.
AU - Driel, van, W.D.
AU - Zhang, G.Q.
PY - 2008
Y1 - 2008
N2 - Since recent years, micro-electronic industry changed the basic materials from Al/SiO2 to Cu/low-k in ICinterconnect structure. As a consequence, new reliability issues at device/product level has been discovered, and most of the failure modes have the characteristics of multi-scale: the failure of the m or nm induces the malfunction of the device/product. Under the pressure of the time-to-market, the industries, universities and research institutes developed numerous multi-scale simulation technologies/tools to analyze the failure mechanism and to achieve the high reliability design with the capability of high volume production and low cost. This paper reviews the multi-scale modeling techniques for reliability and processing issues in Cu/low-k IC back-end structure, from the continuum level to the atomic scale.
AB - Since recent years, micro-electronic industry changed the basic materials from Al/SiO2 to Cu/low-k in ICinterconnect structure. As a consequence, new reliability issues at device/product level has been discovered, and most of the failure modes have the characteristics of multi-scale: the failure of the m or nm induces the malfunction of the device/product. Under the pressure of the time-to-market, the industries, universities and research institutes developed numerous multi-scale simulation technologies/tools to analyze the failure mechanism and to achieve the high reliability design with the capability of high volume production and low cost. This paper reviews the multi-scale modeling techniques for reliability and processing issues in Cu/low-k IC back-end structure, from the continuum level to the atomic scale.
U2 - 10.1016/j.microrel.2008.03.024
DO - 10.1016/j.microrel.2008.03.024
M3 - Article
SN - 0026-2714
VL - 48
SP - 833
EP - 842
JO - Microelectronics Reliability
JF - Microelectronics Reliability
IS - 6
ER -