The hydride stretching modes of hydrogenated vacancies in amorphous and nanocrystalline silicon: A helpful tool for material characterization

A.H.M. Smets; T. Matsui; M. Kondo; M.C.M. van de Sanden

doi:10.1109/PVSC.2009.5411182

The hydride stretching modes of hydrogenated vacancies in amorphous and nanocrystalline silicon: A helpful tool for material characterization

A.H.M. Smets, T. Matsui, M. Kondo, M.C.M. van de Sanden

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

5 Citaten (Scopus)

Samenvatting

A model is proposed to assign the hydrogen complexes in amorphous and nano/microcrystalline silicon to the hydride stretching modes in infrared spectra. We demonstrate that this analysis approach is a helpful tool to characterize the material properties of amorphous and microcrystalline silicon.

Originele taal-2	Engels
Titel	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Plaats van productie	Piscataway
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	721-724
Aantal pagina's	4
ISBN van geprinte versie	9781424429509
DOI's	https://doi.org/10.1109/PVSC.2009.5411182
Status	Gepubliceerd - 1 dec. 2009
Evenement	34th IEEE Photovoltaic Specialists Conference (PVSC 2009) - Philadelphia, Verenigde Staten van Amerika Duur: 7 jun. 2009 → 12 jun. 2009 Congresnummer: 34

Congres

Congres	34th IEEE Photovoltaic Specialists Conference (PVSC 2009)
Verkorte titel	PVSC 2009
Land/Regio	Verenigde Staten van Amerika
Stad	Philadelphia
Periode	7/06/09 → 12/06/09
Ander	34th IEEE Photovoltaic Specialist Conference

Toegang tot document

10.1109/PVSC.2009.5411182

Andere bestanden en links

Link to publication in Scopus

Citeer dit

Smets, A. H. M., Matsui, T., Kondo, M., & van de Sanden, M. C. M. (2009). The hydride stretching modes of hydrogenated vacancies in amorphous and nanocrystalline silicon: A helpful tool for material characterization. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 (blz. 721-724). Artikel 5411182 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PVSC.2009.5411182

@inproceedings{f943b140ce1e4b3692a7b18ad1e488c2,

title = "The hydride stretching modes of hydrogenated vacancies in amorphous and nanocrystalline silicon: A helpful tool for material characterization",

abstract = "A model is proposed to assign the hydrogen complexes in amorphous and nano/microcrystalline silicon to the hydride stretching modes in infrared spectra. We demonstrate that this analysis approach is a helpful tool to characterize the material properties of amorphous and microcrystalline silicon.",

author = "A.H.M. Smets and T. Matsui and M. Kondo and {van de Sanden}, M.C.M.",

year = "2009",

month = dec,

day = "1",

doi = "10.1109/PVSC.2009.5411182",

language = "English",

isbn = "9781424429509",

pages = "721--724",

booktitle = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "34th IEEE Photovoltaic Specialists Conference (PVSC 2009), PVSC 2009 ; Conference date: 07-06-2009 Through 12-06-2009",

}

Smets, AHM, Matsui, T, Kondo, M & van de Sanden, MCM 2009, The hydride stretching modes of hydrogenated vacancies in amorphous and nanocrystalline silicon: A helpful tool for material characterization. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009., 5411182, Institute of Electrical and Electronics Engineers, Piscataway, blz. 721-724, 34th IEEE Photovoltaic Specialists Conference (PVSC 2009), Philadelphia, Pennsylvania, Verenigde Staten van Amerika, 7/06/09. https://doi.org/10.1109/PVSC.2009.5411182

The hydride stretching modes of hydrogenated vacancies in amorphous and nanocrystalline silicon: A helpful tool for material characterization. / Smets, A.H.M.; Matsui, T.; Kondo, M. et al.
2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. Piscataway: Institute of Electrical and Electronics Engineers, 2009. blz. 721-724 5411182.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - The hydride stretching modes of hydrogenated vacancies in amorphous and nanocrystalline silicon

T2 - 34th IEEE Photovoltaic Specialists Conference (PVSC 2009)

AU - Smets, A.H.M.

AU - Matsui, T.

AU - Kondo, M.

AU - van de Sanden, M.C.M.

N1 - Conference code: 34

PY - 2009/12/1

Y1 - 2009/12/1

N2 - A model is proposed to assign the hydrogen complexes in amorphous and nano/microcrystalline silicon to the hydride stretching modes in infrared spectra. We demonstrate that this analysis approach is a helpful tool to characterize the material properties of amorphous and microcrystalline silicon.

AB - A model is proposed to assign the hydrogen complexes in amorphous and nano/microcrystalline silicon to the hydride stretching modes in infrared spectra. We demonstrate that this analysis approach is a helpful tool to characterize the material properties of amorphous and microcrystalline silicon.

UR - http://www.scopus.com/inward/record.url?scp=77951615431&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2009.5411182

DO - 10.1109/PVSC.2009.5411182

M3 - Conference contribution

AN - SCOPUS:77951615431

SN - 9781424429509

SP - 721

EP - 724

BT - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

Y2 - 7 June 2009 through 12 June 2009

ER -

Smets AHM, Matsui T, Kondo M, van de Sanden MCM. The hydride stretching modes of hydrogenated vacancies in amorphous and nanocrystalline silicon: A helpful tool for material characterization. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. Piscataway: Institute of Electrical and Electronics Engineers. 2009. blz. 721-724. 5411182 doi: 10.1109/PVSC.2009.5411182

The hydride stretching modes of hydrogenated vacancies in amorphous and nanocrystalline silicon: A helpful tool for material characterization

Samenvatting

Congres

Toegang tot document

Andere bestanden en links

Vingerafdruk

Citeer dit