The gate voltage dependence of the 1/f noise parameter alpha in MOS transistors

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

Originele taal-2	Engels
Titel	Proc. 13th International Conference on Noise in Physical Systems
Plaats van productie	Singapore
Uitgeverij	World Scientific
Pagina's	397-403
Status	Gepubliceerd - 1995
Evenement	13th International Conference on Noise in Physical Systems - Duur: 1 jan. 1995 → …

Congres	13th International Conference on Noise in Physical Systems
Periode	1/01/95 → …

Citeer dit

@inproceedings{5e427d37a3ef46779b61c0415d27cb6a,

title = "The gate voltage dependence of the 1/f noise parameter alpha in MOS transistors",

author = "L.K.J. Vandamme",

year = "1995",

language = "English",

pages = "397--403",

booktitle = "Proc. 13th International Conference on Noise in Physical Systems",

publisher = "World Scientific",

address = "United States",

note = "13th International Conference on Noise in Physical Systems ; Conference date: 01-01-1995",

}

TY - GEN

T1 - The gate voltage dependence of the 1/f noise parameter alpha in MOS transistors

AU - Vandamme, L.K.J.

PY - 1995

Y1 - 1995

M3 - Conference contribution

SP - 397

EP - 403

BT - Proc. 13th International Conference on Noise in Physical Systems

PB - World Scientific

CY - Singapore

T2 - 13th International Conference on Noise in Physical Systems

Y2 - 1 January 1995

ER -