The effect of thin oxide layers on shallow junction formation

P. A. Stolk; J. Schmitz; F. N. Cubaynes; A.C.M.C. van Brandenburg; J. G.M. Van Berkum; W. G. Van De Wijgert; F. Roozeboom

The effect of thin oxide layers on shallow junction formation

P. A. Stolk, J. Schmitz, F. N. Cubaynes, A.C.M.C. van Brandenburg, J. G.M. Van Berkum, W. G. Van De Wijgert, F. Roozeboom

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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This paper studies the influence of thin oxide screening, layers on the, formation of shallow junctions by low-energy B. implantation and rapid thermal annealing. F011 screening oxides, in the range ftom 0 to 10 nm, it is f found! that the trade-off between junction depth and\ shet resistance ps is not affected! as long, as the implanted dose is adjusted. to compensate. for B trapping in the. oxide. F011 a fixed: implant: dose and enengy, however, minute variations in the oxide, thickness have, a. large influence on pI'ho which limits the reproducibility of. the junctionformation process.

Originele taal-2	Engels
Titel	ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference
Plaats van productie	Piscataway
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	428-431
Aantal pagina's	4
ISBN van geprinte versie	2863322451
Status	Gepubliceerd - 1 jan. 1999
Extern gepubliceerd	Ja
Evenement	29th European Solid-State Device Research Conference, ESSDERC 1999 - Leuven, België Duur: 13 sep. 1999 → 15 sep. 1999

Congres

Congres	29th European Solid-State Device Research Conference, ESSDERC 1999
Land/Regio	België
Stad	Leuven
Periode	13/09/99 → 15/09/99

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Stolk, P. A., Schmitz, J., Cubaynes, F. N., van Brandenburg, A. C. M. C., Van Berkum, J. G. M., Van De Wijgert, W. G., & Roozeboom, F. (1999). The effect of thin oxide layers on shallow junction formation. In ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference (blz. 428-431). Artikel 1505531 Institute of Electrical and Electronics Engineers.

@inproceedings{d40dadd333cb4c4a91f3a3bfd2e6940d,

title = "The effect of thin oxide layers on shallow junction formation",

abstract = "This paper studies the influence of thin oxide screening, layers on the, formation of shallow junctions by low-energy B. implantation and rapid thermal annealing. F011 screening oxides, in the range ftom 0 to 10 nm, it is f found! that the trade-off between junction depth and\ shet resistance ps is not affected! as long, as the implanted dose is adjusted. to compensate. for B trapping in the. oxide. F011 a fixed: implant: dose and enengy, however, minute variations in the oxide, thickness have, a. large influence on pI'ho which limits the reproducibility of. the junctionformation process.",

author = "Stolk, {P. A.} and J. Schmitz and Cubaynes, {F. N.} and {van Brandenburg}, A.C.M.C. and {Van Berkum}, {J. G.M.} and {Van De Wijgert}, {W. G.} and F. Roozeboom",

year = "1999",

month = jan,

day = "1",

language = "English",

isbn = "2863322451",

pages = "428--431",

booktitle = "ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "29th European Solid-State Device Research Conference, ESSDERC 1999 ; Conference date: 13-09-1999 Through 15-09-1999",

}

Stolk, PA, Schmitz, J, Cubaynes, FN, van Brandenburg, ACMC, Van Berkum, JGM, Van De Wijgert, WG & Roozeboom, F 1999, The effect of thin oxide layers on shallow junction formation. in ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference., 1505531, Institute of Electrical and Electronics Engineers, Piscataway, blz. 428-431, 29th European Solid-State Device Research Conference, ESSDERC 1999, Leuven, België, 13/09/99.

The effect of thin oxide layers on shallow junction formation. / Stolk, P. A.; Schmitz, J.; Cubaynes, F. N. et al.
ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference. Piscataway: Institute of Electrical and Electronics Engineers, 1999. blz. 428-431 1505531.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - The effect of thin oxide layers on shallow junction formation

AU - Stolk, P. A.

AU - Schmitz, J.

AU - Cubaynes, F. N.

AU - van Brandenburg, A.C.M.C.

AU - Van Berkum, J. G.M.

AU - Van De Wijgert, W. G.

AU - Roozeboom, F.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - This paper studies the influence of thin oxide screening, layers on the, formation of shallow junctions by low-energy B. implantation and rapid thermal annealing. F011 screening oxides, in the range ftom 0 to 10 nm, it is f found! that the trade-off between junction depth and\ shet resistance ps is not affected! as long, as the implanted dose is adjusted. to compensate. for B trapping in the. oxide. F011 a fixed: implant: dose and enengy, however, minute variations in the oxide, thickness have, a. large influence on pI'ho which limits the reproducibility of. the junctionformation process.

AB - This paper studies the influence of thin oxide screening, layers on the, formation of shallow junctions by low-energy B. implantation and rapid thermal annealing. F011 screening oxides, in the range ftom 0 to 10 nm, it is f found! that the trade-off between junction depth and\ shet resistance ps is not affected! as long, as the implanted dose is adjusted. to compensate. for B trapping in the. oxide. F011 a fixed: implant: dose and enengy, however, minute variations in the oxide, thickness have, a. large influence on pI'ho which limits the reproducibility of. the junctionformation process.

UR - http://www.scopus.com/inward/record.url?scp=84907887536&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84907887536

SN - 2863322451

SP - 428

EP - 431

BT - ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 29th European Solid-State Device Research Conference, ESSDERC 1999

Y2 - 13 September 1999 through 15 September 1999

ER -

The effect of thin oxide layers on shallow junction formation

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