The effect of thin oxide layers on shallow junction formation

P. A. Stolk, J. Schmitz, F. N. Cubaynes, A.C.M.C. van Brandenburg, J. G.M. Van Berkum, W. G. Van De Wijgert, F. Roozeboom

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

This paper studies the influence of thin oxide screening, layers on the, formation of shallow junctions by low-energy B. implantation and rapid thermal annealing. F011 screening oxides, in the range ftom 0 to 10 nm, it is f found! that the trade-off between junction depth and\ shet resistance ps is not affected! as long, as the implanted dose is adjusted. to compensate. for B trapping in the. oxide. F011 a fixed: implant: dose and enengy, however, minute variations in the oxide, thickness have, a. large influence on pI'ho which limits the reproducibility of. the junctionformation process.

Originele taal-2Engels
TitelESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's428-431
Aantal pagina's4
ISBN van geprinte versie2863322451
StatusGepubliceerd - 1 jan 1999
Extern gepubliceerdJa
Evenement29th European Solid-State Device Research Conference, ESSDERC 1999 - Leuven, België
Duur: 13 sep 199915 sep 1999

Congres

Congres29th European Solid-State Device Research Conference, ESSDERC 1999
LandBelgië
StadLeuven
Periode13/09/9915/09/99

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