The disintegration of GaSb/GaAs nanostructures upon capping

A.J. Martin, J. Hwang, E.A. Marquis, E.P. Smakman, T.W. Saucer, G.V. Rodriguez, A.H. Hunter, V. Sih, P.M. Koenraad, J.D. Phillips, J. Millunchick

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

29 Citaten (Scopus)
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Atom probe tomography and cross-sectional scanning tunneling microscopy show that GaSb/GaAs quantum dots disintegrate into ring-like clusters of islands upon capping. Band transition energies calculated using an 8-band k.p model of the capped dots with the observed dimensions are consistent with emission energies observed in photoluminescence data. These results emphasize the need for full three-dimensional characterization to develop an accurate understanding of the structure, and thus the optical properties, of buried quantum dots.
Originele taal-2Engels
Pagina's (van-tot)113103-1/5
Aantal pagina's5
TijdschriftApplied Physics Letters
Nummer van het tijdschrift11
StatusGepubliceerd - 2013

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