Low frequency noise characteristics of light-emitting diodes with InAs quantum dots in GaInAs layer are investigated. Two noise components were found in experimental noise records: RTS, caused by burst noise, and 1/f Gaussian noise. Extraction of burst noise component from Gaussian noise background was performed using standard signal detection theory and advanced signal-processing techniques. It was found that Hooge's empirical relation applied to diodes by Kleinpenning is applicable to the electric 1/f noise in quantum dot diodes as well. Two different spectra decomposition techniques are used to obtain burst noise spectra. Bias dependences of burst and 1/f noise are compared. It is concluded that the RTS noise and 1/f noise have different physical origins in light-emitting diodes with quantum dots.
Belyakov, A. V., Vandamme, L. K. J., Perov, M. Y., & Yakimov, A. V. (2003). The different physical origins of 1/f noise and superimposed RTS noise in light-emitting quantum dot diodes. Fluctuation and Noise Letters, 3(3), L325-L339. https://doi.org/10.1142/S0219477503001403