The different physical origins of 1/f noise and superimposed RTS noise in light-emitting quantum dot diodes

A.V. Belyakov, L.K.J. Vandamme, M.Y. Perov, A.V. Yakimov

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review


Low frequency noise characteristics of light-emitting diodes with InAs quantum dots in GaInAs layer are investigated. Two noise components were found in experimental noise records: RTS, caused by burst noise, and 1/f Gaussian noise. Extraction of burst noise component from Gaussian noise background was performed using standard signal detection theory and advanced signal-processing techniques. It was found that Hooge's empirical relation applied to diodes by Kleinpenning is applicable to the electric 1/f noise in quantum dot diodes as well. Two different spectra decomposition techniques are used to obtain burst noise spectra. Bias dependences of burst and 1/f noise are compared. It is concluded that the RTS noise and 1/f noise have different physical origins in light-emitting diodes with quantum dots.
Originele taal-2Engels
Pagina's (van-tot)L325-L339
Aantal pagina's15
TijdschriftFluctuation and Noise Letters
Nummer van het tijdschrift3
StatusGepubliceerd - 2003


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