Tensile-strained GeSn photodetectors with conformal nitride stressor

M. Morea; K. Zang; C.S. Fenrich; Y.-C. Huang; H. Chung; A.G. Curto; Y. Huo; T.I. Kamins; M.L. Brongersma; J.S. Harris

doi:10.1109/PHOSST.2016.7548540

Tensile-strained GeSn photodetectors with conformal nitride stressor

M. Morea, K. Zang, C.S. Fenrich, Y.-C. Huang, H. Chung, A.G. Curto, Y. Huo, T.I. Kamins, M.L. Brongersma, J.S. Harris

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

3 Citaten (Scopus)

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Applying tensile strain with silicon nitride is demonstrated to improve the responsivity of germanium-tin (Ge1-xSnx) PIN photodetectors at longer wavelengths. Such external stressor films show promise for extending the application of Ge1-xSnx optoelectronic devices into the mid-infrared range.

Originele taal-2	Engels
Titel	2016 IEEE Photonics Society Summer Topical Meeting Series (SUM), 1-13 July 2016, Newport Beach, California
Plaats van productie	Piscataway
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	21-22
Aantal pagina's	2
ISBN van elektronische versie	978-1-5090-1900-7
ISBN van geprinte versie	978-1-5090-1901-4
DOI's	https://doi.org/10.1109/PHOSST.2016.7548540
Status	Gepubliceerd - 2016
Evenement	2016 IEEE Photonics Society Summer Topical Meeting Series (SUM 2016) - Newport Beach Marriott Hotel, Newport Beach, Verenigde Staten van Amerika Duur: 11 jul. 2016 → 13 jul. 2016 http://www.photonicsconferences.org/conferences/welcome?id=357845c5e1df934a7bb02ae890b5c481

Congres

Congres	2016 IEEE Photonics Society Summer Topical Meeting Series (SUM 2016)
Verkorte titel	SUM 2016
Land/Regio	Verenigde Staten van Amerika
Stad	Newport Beach
Periode	11/07/16 → 13/07/16
Internet adres	http://www.photonicsconferences.org/conferences/welcome?id=357845c5e1df934a7bb02ae890b5c481

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10.1109/PHOSST.2016.7548540

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Morea, M., Zang, K., Fenrich, C. S., Huang, Y.-C., Chung, H., Curto, A. G., Huo, Y., Kamins, T. I., Brongersma, M. L., & Harris, J. S. (2016). Tensile-strained GeSn photodetectors with conformal nitride stressor. In 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM), 1-13 July 2016, Newport Beach, California (blz. 21-22). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PHOSST.2016.7548540

@inproceedings{687fb0b7ce704cf88b1cdc860370bdc3,

title = "Tensile-strained GeSn photodetectors with conformal nitride stressor",

abstract = "Applying tensile strain with silicon nitride is demonstrated to improve the responsivity of germanium-tin (Ge1-xSnx) PIN photodetectors at longer wavelengths. Such external stressor films show promise for extending the application of Ge1-xSnx optoelectronic devices into the mid-infrared range.",

keywords = "GeSn, germanium-tin, photodetector, strain, nitride, group-IV photonics, Si photonics",

author = "M. Morea and K. Zang and C.S. Fenrich and Y.-C. Huang and H. Chung and A.G. Curto and Y. Huo and T.I. Kamins and M.L. Brongersma and J.S. Harris",

year = "2016",

doi = "10.1109/PHOSST.2016.7548540",

language = "English",

isbn = "978-1-5090-1901-4 ",

pages = "21--22",

booktitle = "2016 IEEE Photonics Society Summer Topical Meeting Series (SUM), 1-13 July 2016, Newport Beach, California",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2016 IEEE Photonics Society Summer Topical Meeting Series (SUM 2016), SUM 2016 ; Conference date: 11-07-2016 Through 13-07-2016",

url = "http://www.photonicsconferences.org/conferences/welcome?id=357845c5e1df934a7bb02ae890b5c481",

}

Morea, M, Zang, K, Fenrich, CS, Huang, Y-C, Chung, H, Curto, AG, Huo, Y, Kamins, TI, Brongersma, ML & Harris, JS 2016, Tensile-strained GeSn photodetectors with conformal nitride stressor. in 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM), 1-13 July 2016, Newport Beach, California. Institute of Electrical and Electronics Engineers, Piscataway, blz. 21-22, 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM 2016), Newport Beach, Verenigde Staten van Amerika, 11/07/16. https://doi.org/10.1109/PHOSST.2016.7548540

Tensile-strained GeSn photodetectors with conformal nitride stressor. / Morea, M.; Zang, K.; Fenrich, C.S. et al.
2016 IEEE Photonics Society Summer Topical Meeting Series (SUM), 1-13 July 2016, Newport Beach, California. Piscataway: Institute of Electrical and Electronics Engineers, 2016. blz. 21-22.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Tensile-strained GeSn photodetectors with conformal nitride stressor

AU - Morea, M.

AU - Zang, K.

AU - Fenrich, C.S.

AU - Huang, Y.-C.

AU - Chung, H.

AU - Curto, A.G.

AU - Huo, Y.

AU - Kamins, T.I.

AU - Brongersma, M.L.

AU - Harris, J.S.

PY - 2016

Y1 - 2016

N2 - Applying tensile strain with silicon nitride is demonstrated to improve the responsivity of germanium-tin (Ge1-xSnx) PIN photodetectors at longer wavelengths. Such external stressor films show promise for extending the application of Ge1-xSnx optoelectronic devices into the mid-infrared range.

AB - Applying tensile strain with silicon nitride is demonstrated to improve the responsivity of germanium-tin (Ge1-xSnx) PIN photodetectors at longer wavelengths. Such external stressor films show promise for extending the application of Ge1-xSnx optoelectronic devices into the mid-infrared range.

KW - GeSn

KW - germanium-tin

KW - photodetector

KW - strain

KW - nitride

KW - group-IV photonics

KW - Si photonics

U2 - 10.1109/PHOSST.2016.7548540

DO - 10.1109/PHOSST.2016.7548540

M3 - Conference contribution

SN - 978-1-5090-1901-4

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BT - 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM), 1-13 July 2016, Newport Beach, California

PB - Institute of Electrical and Electronics Engineers

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Y2 - 11 July 2016 through 13 July 2016

ER -

Tensile-strained GeSn photodetectors with conformal nitride stressor

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