Temperature behaviour of threshold current density and differential efficiency in low confinement 6 nm single quantum well laser diode structure for high power purposes

M. Buda; G. Iordache; D. Cengher; D. Diaconescu; F. Karouta

Temperature behaviour of threshold current density and differential efficiency in low confinement 6 nm single quantum well laser diode structure for high power purposes

M. Buda, G. Iordache, D. Cengher, D. Diaconescu, F. Karouta

Photonic Integration

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

Originele taal-2	Engels
Titel	Proceedings 1996 IEEE/LEOS Symposium : Annual Symposium of the IEEE/LEOS Benelux Chapter, November 28, 1996, Enschede, The Netherlands
Redacteuren	A. Driessen, R.M. Ridder, de
Plaats van productie	Enschede
Uitgeverij	IEEE/LEOS
Pagina's	175-178
ISBN van geprinte versie	90-365-0920-5
Status	Gepubliceerd - 1996
Evenement	1st Annual Symposium of the IEEE/LEOS Benelux Chapter, November 28, 1996, Enschede, The Netherlands - Enschede, Nederland Duur: 28 nov. 1996 → 28 nov. 1996

Congres

Congres	1st Annual Symposium of the IEEE/LEOS Benelux Chapter, November 28, 1996, Enschede, The Netherlands
Land/Regio	Nederland
Stad	Enschede
Periode	28/11/96 → 28/11/96
Ander	Proc. 1996 IEEE/LEOS Benelux Chapter Symposium, Enschede, netherlands, 28 November 1996

Citeer dit

Buda, M., Iordache, G., Cengher, D., Diaconescu, D., & Karouta, F. (1996). Temperature behaviour of threshold current density and differential efficiency in low confinement 6 nm single quantum well laser diode structure for high power purposes. In A. Driessen, & R. M. Ridder, de (editors), Proceedings 1996 IEEE/LEOS Symposium : Annual Symposium of the IEEE/LEOS Benelux Chapter, November 28, 1996, Enschede, The Netherlands (blz. 175-178). IEEE/LEOS.

Buda, M. ; Iordache, G. ; Cengher, D. et al. / Temperature behaviour of threshold current density and differential efficiency in low confinement 6 nm single quantum well laser diode structure for high power purposes. Proceedings 1996 IEEE/LEOS Symposium : Annual Symposium of the IEEE/LEOS Benelux Chapter, November 28, 1996, Enschede, The Netherlands. redacteur / A. Driessen ; R.M. Ridder, de. Enschede : IEEE/LEOS, 1996. blz. 175-178

@inproceedings{9d18bc1d315e433881d3021399645d72,

title = "Temperature behaviour of threshold current density and differential efficiency in low confinement 6 nm single quantum well laser diode structure for high power purposes",

author = "M. Buda and G. Iordache and D. Cengher and D. Diaconescu and F. Karouta",

year = "1996",

language = "English",

isbn = "90-365-0920-5",

pages = "175--178",

editor = "A. Driessen and {Ridder, de}, R.M.",

booktitle = "Proceedings 1996 IEEE/LEOS Symposium : Annual Symposium of the IEEE/LEOS Benelux Chapter, November 28, 1996, Enschede, The Netherlands",

publisher = "IEEE/LEOS",

note = "1st Annual Symposium of the IEEE/LEOS Benelux Chapter, November 28, 1996, Enschede, The Netherlands ; Conference date: 28-11-1996 Through 28-11-1996",

}

Buda, M, Iordache, G, Cengher, D, Diaconescu, D & Karouta, F 1996, Temperature behaviour of threshold current density and differential efficiency in low confinement 6 nm single quantum well laser diode structure for high power purposes. in A Driessen & RM Ridder, de (uitgave), Proceedings 1996 IEEE/LEOS Symposium : Annual Symposium of the IEEE/LEOS Benelux Chapter, November 28, 1996, Enschede, The Netherlands. IEEE/LEOS, Enschede, blz. 175-178, 1st Annual Symposium of the IEEE/LEOS Benelux Chapter, November 28, 1996, Enschede, The Netherlands, Enschede, Nederland, 28/11/96.

Temperature behaviour of threshold current density and differential efficiency in low confinement 6 nm single quantum well laser diode structure for high power purposes. / Buda, M.; Iordache, G.; Cengher, D. et al.
Proceedings 1996 IEEE/LEOS Symposium : Annual Symposium of the IEEE/LEOS Benelux Chapter, November 28, 1996, Enschede, The Netherlands. uitgave / A. Driessen; R.M. Ridder, de. Enschede: IEEE/LEOS, 1996. blz. 175-178.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Temperature behaviour of threshold current density and differential efficiency in low confinement 6 nm single quantum well laser diode structure for high power purposes

AU - Buda, M.

AU - Iordache, G.

AU - Cengher, D.

AU - Diaconescu, D.

AU - Karouta, F.

PY - 1996

Y1 - 1996

M3 - Conference contribution

SN - 90-365-0920-5

SP - 175

EP - 178

BT - Proceedings 1996 IEEE/LEOS Symposium : Annual Symposium of the IEEE/LEOS Benelux Chapter, November 28, 1996, Enschede, The Netherlands

A2 - Driessen, A.

A2 - Ridder, de, R.M.

PB - IEEE/LEOS

CY - Enschede

T2 - 1st Annual Symposium of the IEEE/LEOS Benelux Chapter, November 28, 1996, Enschede, The Netherlands

Y2 - 28 November 1996 through 28 November 1996

ER -

Buda M, Iordache G, Cengher D, Diaconescu D, Karouta F. Temperature behaviour of threshold current density and differential efficiency in low confinement 6 nm single quantum well laser diode structure for high power purposes. In Driessen A, Ridder, de RM, redacteurs, Proceedings 1996 IEEE/LEOS Symposium : Annual Symposium of the IEEE/LEOS Benelux Chapter, November 28, 1996, Enschede, The Netherlands. Enschede: IEEE/LEOS. 1996. blz. 175-178