Synthesis and properties of n-type doped semiconducting materials

K.H. Chmill; D.M. Leeuw, de; M.M.J. Simenon; A.J.W. Tol

doi:10.1016/S0379-6779(97)80795-3

Synthesis and properties of n-type doped semiconducting materials

K.H. Chmill, D.M. Leeuw, de, M.M.J. Simenon, A.J.W. Tol

Department of Mechanical Engineering

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

6 Citaten (Scopus)

Samenvatting

The availibility of stable n-type doped semiconducting polymers would allow the fabrication of p(i)n-diodes and light-emitting p(i)n-diodes. But until now no n-type doped conducting polymers, having similar stability to p-doped polymers, such as polypyrrole or polyaniline, are known. For applications in bipolar polymeric microelectronic devices we aim for n-type doped polymers with an electrode potential of about -0.5 V (SCE). Electronegative hetero aromatic oligomers, viz. oligo-oxa(thia)diazoles, are presently synthesized for this purpose to demonstrate the correlation between conjugation length and observed redox potential.

Originele taal-2	Engels
Pagina's (van-tot)	387-388
Tijdschrift	Synthetic Metals
Volume	84
Nummer van het tijdschrift	1-3
DOI's	https://doi.org/10.1016/S0379-6779(97)80795-3
Status	Gepubliceerd - 1997

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