Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

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Uittreksel

Remote plasma at. layer deposition (ALD) of TaNx films from Ta[NMe2]5 and H2, H2-N2, and NH3 plasmas is reported. From film anal. by in situ spectroscopic ellipsometry and various ex situ techniques, data on growth rate, at. compn., mass d., TaNx microstructure, and resistivity are presented for films deposited at substrate temps. between 150 and 250 Deg. Cubic TaNx films with a high mass d. (12.1 g cm-3) and low elec. resistivity (380 micro W cm) can be deposited using a H2 plasma with the d. and resistivity of the films improving with plasma exposure time. H2-N2 and NH3 plasmas resulted in N-rich Ta3N5 films with a high resistivity. The different TaNx phases can be distinguished in situ by spectroscopic ellipsometry from their dielec. function with the magnitude of the Drude absorption yielding information on the resistivity of the films. The satn. of the ALD surface reactions can be detd. by monitoring the plasma emission, as revealed by optical emission spectroscopy. [on SciFinder (R)]
TaalEngels
Artikelnummer083517
Pagina's083517-1/11
TijdschriftJournal of Applied Physics
Volume102
Nummer van het tijdschrift8
DOI's
StatusGepubliceerd - 2007

Vingerafdruk

atomic layer epitaxy
electrical resistivity
synthesis
ellipsometry
optical emission spectroscopy
surface reactions
microstructure

Citeer dit

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title = "Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition",
abstract = "Remote plasma at. layer deposition (ALD) of TaNx films from Ta[NMe2]5 and H2, H2-N2, and NH3 plasmas is reported. From film anal. by in situ spectroscopic ellipsometry and various ex situ techniques, data on growth rate, at. compn., mass d., TaNx microstructure, and resistivity are presented for films deposited at substrate temps. between 150 and 250 Deg. Cubic TaNx films with a high mass d. (12.1 g cm-3) and low elec. resistivity (380 micro W cm) can be deposited using a H2 plasma with the d. and resistivity of the films improving with plasma exposure time. H2-N2 and NH3 plasmas resulted in N-rich Ta3N5 films with a high resistivity. The different TaNx phases can be distinguished in situ by spectroscopic ellipsometry from their dielec. function with the magnitude of the Drude absorption yielding information on the resistivity of the films. The satn. of the ALD surface reactions can be detd. by monitoring the plasma emission, as revealed by optical emission spectroscopy. [on SciFinder (R)]",
author = "E. Langereis and H.C.M. Knoops and A.J.M. Mackus and F. Roozeboom and {Sanden, van de}, M.C.M. and W.M.M. Kessels",
year = "2007",
doi = "10.1063/1.2798598",
language = "English",
volume = "102",
pages = "083517--1/11",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "8",

}

Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition. / Langereis, E.; Knoops, H.C.M.; Mackus, A.J.M.; Roozeboom, F.; Sanden, van de, M.C.M.; Kessels, W.M.M.

In: Journal of Applied Physics, Vol. 102, Nr. 8, 083517, 2007, blz. 083517-1/11.

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

TY - JOUR

T1 - Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition

AU - Langereis,E.

AU - Knoops,H.C.M.

AU - Mackus,A.J.M.

AU - Roozeboom,F.

AU - Sanden, van de,M.C.M.

AU - Kessels,W.M.M.

PY - 2007

Y1 - 2007

N2 - Remote plasma at. layer deposition (ALD) of TaNx films from Ta[NMe2]5 and H2, H2-N2, and NH3 plasmas is reported. From film anal. by in situ spectroscopic ellipsometry and various ex situ techniques, data on growth rate, at. compn., mass d., TaNx microstructure, and resistivity are presented for films deposited at substrate temps. between 150 and 250 Deg. Cubic TaNx films with a high mass d. (12.1 g cm-3) and low elec. resistivity (380 micro W cm) can be deposited using a H2 plasma with the d. and resistivity of the films improving with plasma exposure time. H2-N2 and NH3 plasmas resulted in N-rich Ta3N5 films with a high resistivity. The different TaNx phases can be distinguished in situ by spectroscopic ellipsometry from their dielec. function with the magnitude of the Drude absorption yielding information on the resistivity of the films. The satn. of the ALD surface reactions can be detd. by monitoring the plasma emission, as revealed by optical emission spectroscopy. [on SciFinder (R)]

AB - Remote plasma at. layer deposition (ALD) of TaNx films from Ta[NMe2]5 and H2, H2-N2, and NH3 plasmas is reported. From film anal. by in situ spectroscopic ellipsometry and various ex situ techniques, data on growth rate, at. compn., mass d., TaNx microstructure, and resistivity are presented for films deposited at substrate temps. between 150 and 250 Deg. Cubic TaNx films with a high mass d. (12.1 g cm-3) and low elec. resistivity (380 micro W cm) can be deposited using a H2 plasma with the d. and resistivity of the films improving with plasma exposure time. H2-N2 and NH3 plasmas resulted in N-rich Ta3N5 films with a high resistivity. The different TaNx phases can be distinguished in situ by spectroscopic ellipsometry from their dielec. function with the magnitude of the Drude absorption yielding information on the resistivity of the films. The satn. of the ALD surface reactions can be detd. by monitoring the plasma emission, as revealed by optical emission spectroscopy. [on SciFinder (R)]

U2 - 10.1063/1.2798598

DO - 10.1063/1.2798598

M3 - Article

VL - 102

SP - 083517-1/11

JO - Journal of Applied Physics

T2 - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

M1 - 083517

ER -