@inproceedings{13f6edd017184bbc956a8a5bf6958f25,
title = "Switching speed in resistive random access memories (RRAMS) based on plastic semiconductor",
abstract = "This work addresses non-volatile memories based on metal-oxide polymer diodes. We make a thorough investigation into the static and dynamic behavior. Current-voltage characteristics with varying voltage ramp speed demonstrate that the internal capacitive double-layer structure inhibits the switching at high ramp rates (typical 1000 V/s). This behavior is explained in terms of an equivalent circuit. It is also reported that there is not a particular threshold voltage to induce switching. Voltages below a particular threshold can still induce switching when applied for a long period of time. The time to switch is longer the lower is the applied voltage and follows an exponential behavior. This suggests that for a switching event to occur a certain amount of charge is required.",
author = "P.R.F. Rocha and H.L. Gomes and A. Kiazadeh and Qian Chen and {Leeuw, de}, D.M. and S.C.J. Meskers",
year = "2011",
doi = "10.1557/opl.2011.859",
language = "English",
series = "Materials Research Society symposium proceedings",
publisher = "Materials Research Society",
pages = "1--6",
booktitle = "New Functional Materials and Emerging Device Architectures for Nonvolatile Memories",
address = "United States",
}