Switching in polymeric resistance random-access memories (RRAMS)

H.L. Gomes; A.R. Benvenho; D.M. Leeuw, de; M. Cölle; P. Stallinga; F. Verbakel; D.M. Taylor

doi:10.1016/j.orgel.2007.10.002

Switching in polymeric resistance random-access memories (RRAMS)

H.L. Gomes
, A.R. Benvenho
, D.M. Leeuw, de
, M. Cölle
, P. Stallinga
, F. Verbakel
, D.M. Taylor

Materials to Optoelectronic Devices

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

38 Citaten (Scopus)

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Resistive switching in aluminum-polymer-based diodes has been investigated using small signal impedance measurements. It is shown that switching is a two-step process. In the first step, the device remains highly resistive but the low frequency capacitance increases by orders of magnitude. In the second step, resistive switching takes place. A tentative model is presented that can account for the observed behavior. The impedance analysis shows that the device does not behave homogenously over the entire electrode area and only a fraction of the device area gives rise to switching.

Originele taal-2	Engels
Pagina's (van-tot)	119-128
Tijdschrift	Organic Electronics
Volume	9
Nummer van het tijdschrift	1
DOI's	https://doi.org/10.1016/j.orgel.2007.10.002
Status	Gepubliceerd - 2008

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10.1016/j.orgel.2007.10.002

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AU - Benvenho, A.R.

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AU - Stallinga, P.

AU - Verbakel, F.

AU - Taylor, D.M.

PY - 2008

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N2 - Resistive switching in aluminum-polymer-based diodes has been investigated using small signal impedance measurements. It is shown that switching is a two-step process. In the first step, the device remains highly resistive but the low frequency capacitance increases by orders of magnitude. In the second step, resistive switching takes place. A tentative model is presented that can account for the observed behavior. The impedance analysis shows that the device does not behave homogenously over the entire electrode area and only a fraction of the device area gives rise to switching.

AB - Resistive switching in aluminum-polymer-based diodes has been investigated using small signal impedance measurements. It is shown that switching is a two-step process. In the first step, the device remains highly resistive but the low frequency capacitance increases by orders of magnitude. In the second step, resistive switching takes place. A tentative model is presented that can account for the observed behavior. The impedance analysis shows that the device does not behave homogenously over the entire electrode area and only a fraction of the device area gives rise to switching.

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Switching in polymeric resistance random-access memories (RRAMS)

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