Surface induced asymmetry of acceptor wave functions

C. Celebi, J.K. Garleff, A.Yu. Silov, A.M. Yakunin, P.M. Koenraad, W. Roy, van, J.-M. Tang, M.E. Flatté

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

23 Citaten (Scopus)
153 Downloads (Pure)


Measurements of the local density of states of individual acceptors in III–V semiconductors show that the symmetry of the acceptor states strongly depends on the depth of the atom below a (110) surface. Tight-binding calculations performed for a uniformly strained bulk material demonstrate that strain induced by the surface relaxation is responsible for the observed depth-dependent symmetry breaking of acceptor wave functions. As this effect is strongest for weakly bound acceptors, it explains within a unified approach the commonly observed triangular shapes of shallow acceptors and the crosslike shapes of deeply bound acceptor states in III–V materials.
Originele taal-2Engels
Pagina's (van-tot)086404-1/4
Aantal pagina's4
TijdschriftPhysical Review Letters
Nummer van het tijdschrift8
StatusGepubliceerd - 2010


Duik in de onderzoeksthema's van 'Surface induced asymmetry of acceptor wave functions'. Samen vormen ze een unieke vingerafdruk.

Citeer dit