Surface induced asymmetry of acceptor wave functions

C. Celebi, J.K. Garleff, A.Yu. Silov, A.M. Yakunin, P.M. Koenraad, W. Roy, van, J.-M. Tang, M.E. Flatté

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

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Measurements of the local density of states of individual acceptors in III–V semiconductors show that the symmetry of the acceptor states strongly depends on the depth of the atom below a (110) surface. Tight-binding calculations performed for a uniformly strained bulk material demonstrate that strain induced by the surface relaxation is responsible for the observed depth-dependent symmetry breaking of acceptor wave functions. As this effect is strongest for weakly bound acceptors, it explains within a unified approach the commonly observed triangular shapes of shallow acceptors and the crosslike shapes of deeply bound acceptor states in III–V materials.
Originele taal-2Engels
Artikelnummer086404
Pagina's (van-tot)086404-1/4
Aantal pagina's4
TijdschriftPhysical Review Letters
Volume104
Nummer van het tijdschrift8
DOI's
StatusGepubliceerd - 2010

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