Submicron active-passive integration for InP-bsed membranes on silicon

R. Zhang, F. Bordas, J.J.G.M. Tol, van der, B. Ambrosius, M.A. Dundar, G. Roelkens, M.K. Smit, P.J.A. Thijs

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageProfessioneel

33 Downloads (Pure)

Samenvatting

The high vertical index contrast and the small thickness of thin InP-based membrane structures bonded with BCB on Silicon allow the realization of very small devices. To make photonic integrated circuits with both passive and active components in these membranes, active-passive integration on a small scale is essential. In this paper we will present our results on sub-micrometer active areas for membrane applications.
Originele taal-2Engels
TitelProceedings of the 15th European Conference in Integrated Optics, ECIO 2010, April 6-9, 2010, Cambridge, United Kingdom
Plaats van productieLondon
UitgeverijInstitution of Engineering and Technology (IET)
Pagina's1-2
StatusGepubliceerd - 2010
Evenement15th European Conference on Integrated Optics (ECIO 2010) - Cambridge, Verenigd Koninkrijk
Duur: 7 apr 20109 apr 2010
Congresnummer: 15

Congres

Congres15th European Conference on Integrated Optics (ECIO 2010)
Verkorte titelECIO 2010
Land/RegioVerenigd Koninkrijk
StadCambridge
Periode7/04/109/04/10
Ander15th European conference on integrated optics, ECIO 10

Vingerafdruk

Duik in de onderzoeksthema's van 'Submicron active-passive integration for InP-bsed membranes on silicon'. Samen vormen ze een unieke vingerafdruk.

Citeer dit