Sub-10 nm pattern placement verification of quantum tomography freestanding gratings

M.F.A. Eurlings, J.T.M. van Beek, M.J. Verheijen, J.P. Weterings, H.C.W. Beijerinck

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    Samenvatting

    First, a new method to detect drift induced electron beam placement errors is presented; by writing the grating in interlaced series the time between writing two neighbouring beams that define a slit (in a negative resist) is extended without extending the total exposure time, thus making drift more visible. Second, a new method to reduce charge built up in a 100 nm SiN membrane was experimentally proven to be successfull. These two methods made fabricating 1083 nm period freestanding gratings, with a slitwidth of 100 nm, and a slitwidth deviation of 6 nm possible.
    Originele taal-2Engels
    Pagina's (van-tot)219-222
    Aantal pagina's4
    TijdschriftMicroelectronic Engineering
    Volume41/42
    DOI's
    StatusGepubliceerd - 1998

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