Study of Spatial Distortion in InP Nanophotonic Membranes on Different Carrier Substrates

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademic

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Samenvatting

Electron Beam Lithography (EBL) metrology and least-square estimation of wafer-scale distortions is used to determine InP membrane deformation as a result of bonding to different substrate materials. First, the accuracy of EBL as a metrology tool for this particular application was assessed. Next, modelling of distortions was tested on unbonded InP wafers as a reference for extracting post-bonding distortions. Then we investigated the effect of substrate material choice on InP membrane deformation after bonding. We found residual expansion factors of 4.53±1, 312.4±1, and 317±1 ppm of the InP membrane bonded to InP, Si, and 3C-SiC carriers, respectively. For the SiO 2 carrier, the 3inch InP membrane split into smaller membranes to reduce the stress, highlighting the importance of substrate choice.
Originele taal-2Engels
Titel2023 24th European Microelectronics and Packaging Conference & Exhibition, EMPC 2023
UitgeverijInstitute of Electrical and Electronics Engineers
Aantal pagina's5
ISBN van elektronische versie978-0-9568086-9-1
DOI's
StatusGepubliceerd - 9 feb. 2024
Evenement24th European Microelectronics and Packaging Conference & Exhibition, EMPC 2023 - Cambridge, Verenigd Koninkrijk
Duur: 11 sep. 202314 sep. 2023

Congres

Congres24th European Microelectronics and Packaging Conference & Exhibition, EMPC 2023
Verkorte titelEMPC 2023
Land/RegioVerenigd Koninkrijk
StadCambridge
Periode11/09/2314/09/23

Financiering

ACKNOWLEDGMENT This research was performed in the NanoLab@TU/e cleanroom facility. This work was supported by the H2020 ICT TWILIGHT Project (contract No. 781471) under the Photonics PPP.

FinanciersFinanciernummer
H2020 ICT TWILIGHT781471

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