Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates

S. Haffouz, A. Grzegorczyk, P.R. Hageman, P. Vennegues, E.W.J.M. Drift, van der, P.K. Larsen

Onderzoeksoutput: Bijdrage aan congresOtherAcademic

Originele taal-2Engels
Aantal pagina's13
StatusGepubliceerd - 2002
Evenement11th International Conference on Metal-Organic Vapour Phase Epitaxy, June 1, 2002, Berlin, Germany - Berlin, Duitsland
Duur: 1 jun 20021 jun 2002

Congres

Congres11th International Conference on Metal-Organic Vapour Phase Epitaxy, June 1, 2002, Berlin, Germany
LandDuitsland
StadBerlin
Periode1/06/021/06/02
Ander11th International Conference on Metal-Organis Vapour Phase Epitaxy

Citeer dit

Haffouz, S., Grzegorczyk, A., Hageman, P. R., Vennegues, P., Drift, van der, E. W. J. M., & Larsen, P. K. (2002). Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates. 11th International Conference on Metal-Organic Vapour Phase Epitaxy, June 1, 2002, Berlin, Germany, Berlin, Duitsland.
Haffouz, S. ; Grzegorczyk, A. ; Hageman, P.R. ; Vennegues, P. ; Drift, van der, E.W.J.M. ; Larsen, P.K. / Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates. 11th International Conference on Metal-Organic Vapour Phase Epitaxy, June 1, 2002, Berlin, Germany, Berlin, Duitsland.13 blz.
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Haffouz, S, Grzegorczyk, A, Hageman, PR, Vennegues, P, Drift, van der, EWJM & Larsen, PK 2002, 'Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates', Berlin, Duitsland, 1/06/02 - 1/06/02, .

Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates. / Haffouz, S.; Grzegorczyk, A.; Hageman, P.R.; Vennegues, P.; Drift, van der, E.W.J.M.; Larsen, P.K.

2002. 11th International Conference on Metal-Organic Vapour Phase Epitaxy, June 1, 2002, Berlin, Germany, Berlin, Duitsland.

Onderzoeksoutput: Bijdrage aan congresOtherAcademic

TY - CONF

T1 - Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates

AU - Haffouz, S.

AU - Grzegorczyk, A.

AU - Hageman, P.R.

AU - Vennegues, P.

AU - Drift, van der, E.W.J.M.

AU - Larsen, P.K.

PY - 2002

Y1 - 2002

M3 - Other

ER -

Haffouz S, Grzegorczyk A, Hageman PR, Vennegues P, Drift, van der EWJM, Larsen PK. Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates. 2002. 11th International Conference on Metal-Organic Vapour Phase Epitaxy, June 1, 2002, Berlin, Germany, Berlin, Duitsland.