Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates

S. Haffouz; A. Grzegorczyk; P.R. Hageman; P. Vennegues; E.W.J.M. Drift, van der; P.K. Larsen

Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates

S. Haffouz, A. Grzegorczyk, P.R. Hageman, P. Vennegues, E.W.J.M. Drift, van der, P.K. Larsen

Photonic Integration

Onderzoeksoutput: Bijdrage aan congres › Other › Academic

Originele taal-2	Engels
Aantal pagina's	13
Status	Gepubliceerd - 2002
Evenement	11th International Conference on Metal-Organic Vapour Phase Epitaxy, June 1, 2002, Berlin, Germany - Berlin, Duitsland Duur: 1 jun. 2002 → 1 jun. 2002

Congres

Congres	11th International Conference on Metal-Organic Vapour Phase Epitaxy, June 1, 2002, Berlin, Germany
Land/Regio	Duitsland
Stad	Berlin
Periode	1/06/02 → 1/06/02
Ander	11th International Conference on Metal-Organis Vapour Phase Epitaxy

Citeer dit

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title = "Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates",

author = "S. Haffouz and A. Grzegorczyk and P.R. Hageman and P. Vennegues and {Drift, van der}, E.W.J.M. and P.K. Larsen",

year = "2002",

language = "English",

note = "11th International Conference on Metal-Organic Vapour Phase Epitaxy, June 1, 2002, Berlin, Germany ; Conference date: 01-06-2002 Through 01-06-2002",

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TY - CONF

T1 - Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates

AU - Haffouz, S.

AU - Grzegorczyk, A.

AU - Hageman, P.R.

AU - Vennegues, P.

AU - Drift, van der, E.W.J.M.

AU - Larsen, P.K.

PY - 2002

Y1 - 2002

M3 - Other

T2 - 11th International Conference on Metal-Organic Vapour Phase Epitaxy, June 1, 2002, Berlin, Germany

Y2 - 1 June 2002 through 1 June 2002

ER -