Structural Investigations of GaAs/AIAs quantum wires and quantum dots

A.A. Darhuber, G. Bauer, P.D. Wang, Y.P. Song, C.M. Sotomayor Torres, M.C. Holland

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    Samenvatting

    We have investigated periodic arrays of dry etched 150 nm and 175 nm wide, (110) oriented GaAs/AlAs quantum wires and quantum dots by means of reciprocal-space mapping using triple-axis X-ray diffractometry. From the X-ray data the lateral periodicity of wires and dots, the etch depth and the angle of misorientation of the wires with respect to the (110) direction are extracted. The reciprocal-space maps reveal that, after the fabrication process the lattice constant along the growth direction increases slightly for the wires and even more so for the dots.
    Originele taal-2Engels
    Pagina's (van-tot)A195-A199
    Aantal pagina's5
    TijdschriftJournal of Physics D: Applied Physics
    Volume28
    Nummer van het tijdschriftA4
    DOI's
    StatusGepubliceerd - 1995

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